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SiR696DP-T1-GE3 - Vishay

Description: MOSFET 125V Vds 20V Vgs PowerPAK SO-8

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SiR696DP-T1-GE3 - Vishay PCB footprint - Other - Other - PowerPAK_SO-8_Single_2022-1-1
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SiR696DP-T1-GE3 Details

  • Manufacturer Part Number:

    SIR696DP-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SOP-8

  • Reach Compliance Code:

    Unknown

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    29 Weeks

  • Date Of Intro:

    2016-05-02

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    6.12

  • Avalanche Energy Rating (Eas):

    80 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    125 V

  • Drain Current-Max (ID):

    60 A

  • Drain-source On Resistance-Max:

    0.0115 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    13 pF

  • JESD-30 Code:

    R-PDSO-F8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    104 W

  • Pulsed Drain Current-Max (IDM):

    150 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    50 ns

  • Turn-on Time-Max (ton):

    62 ns

SiR696DP-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended land pattern for SIR696DP-T1-GE3 can be found in the Vishay Intertechnologies' application note 'Land Pattern Recommendations for Vishay's Power MOSFETs' (document number: 41551).
  • To ensure reliability in high-temperature applications, it is essential to follow proper thermal management practices, such as providing adequate heat sinking, using thermal interface materials, and ensuring good airflow. Additionally, the device should be operated within its specified temperature range and derated accordingly.
  • Vishay Intertechnologies recommends following the ESD protection guidelines outlined in the JEDEC standard JESD625-A. This includes using ESD-protective packaging, handling devices with ESD-protective equipment, and implementing ESD-protective workstations.
  • Yes, the SIR696DP-T1-GE3 is suitable for high-frequency switching applications. However, it is essential to consider the device's switching characteristics, such as rise and fall times, and ensure that the application's switching frequency is within the device's specified limits.
  • Vishay Intertechnologies recommends storing the SIR696DP-T1-GE3 in its original packaging, away from direct sunlight, moisture, and extreme temperatures. Handling should be done with ESD-protective equipment, and devices should be soldered within the recommended temperature range.

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