SIR802DP-T1-GE3 - Vishay

SIR802DP-T1-GE3 Details

• Manufacturer Part Number:

  SIR802DP-T1-GE3

• Rohs Code:

  Yes

• Part Life Cycle Code:

  Obsolete

• Package Description:

  HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SOP-8

• ECCN Code:

  EAR99

• HTS Code:

  8541.29.00.95

• Manufacturer:

  Vishay Intertechnologies

• YTEOL:

  0

• Avalanche Energy Rating (Eas):

  20 mJ

• Case Connection:

  DRAIN

• Configuration:

  SINGLE WITH BUILT-IN DIODE

• DS Breakdown Voltage-Min:

  20 V

• Drain Current-Max (ID):

  30 A

• Drain-source On Resistance-Max:

  0.005 Ω

• FET Technology:

  METAL-OXIDE SEMICONDUCTOR

• JESD-30 Code:

  R-PDSO-C5

• JESD-609 Code:

  e3

• Number of Elements:

  1

• Number of Terminals:

  5

• Operating Mode:

  ENHANCEMENT MODE

• Operating Temperature-Max:

  150 °C

• Package Body Material:

  PLASTIC/EPOXY

• Package Shape:

  RECTANGULAR

• Package Style:

  SMALL OUTLINE

• Polarity/Channel Type:

  N-CHANNEL

• Power Dissipation-Max (Abs):

  27.7 W

• Pulsed Drain Current-Max (IDM):

  70 A

• Qualification Status:

  Not Qualified

• Surface Mount:

  YES

• Terminal Finish:

  MATTE TIN

• Terminal Form:

  C BEND

• Terminal Position:

  DUAL

• Transistor Application:

  SWITCHING

• Transistor Element Material:

  SILICON