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SIR804DP-T1-GE3 - Vishay

Description: Trans MOSFET N-CH 100V 20.8A 8-Pin PowerPAK SO T/R

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SIR804DP-T1-GE3 - Vishay - PCB symbol
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SIR804DP-T1-GE3 - Vishay PCB footprint - Other - Other - SIR804DP-T1-GE3-3
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SIR804DP-T1-GE3 Details

  • Manufacturer Part Number:

    SIR804DP-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SOP-8

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    29 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5.9

  • Avalanche Energy Rating (Eas):

    61 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    60 A

  • Drain-source On Resistance-Max:

    0.0078 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-C5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    104 W

  • Pulsed Drain Current-Max (IDM):

    100 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    C BEND

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SIR804DP-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended land pattern for the SIR804DP-T1-GE3 can be found in the Vishay Intertechnologies' application note 'Land Pattern Recommendations for Vishay's Power MOSFETs' (document number: 41551).
  • To ensure proper cooling, follow the thermal management guidelines in the datasheet, and consider using a heat sink with a thermal interface material (TIM) to reduce thermal resistance. Additionally, ensure good airflow around the device.
  • The maximum allowed voltage for the SIR804DP-T1-GE3's gate-source voltage (Vgs) is ±20 V. Exceeding this voltage may damage the device.
  • Yes, the SIR804DP-T1-GE3 is suitable for high-frequency switching applications due to its low gate charge and internal gate resistance. However, ensure proper PCB layout and decoupling to minimize parasitic inductance and capacitance.
  • Follow proper ESD handling procedures when handling the SIR804DP-T1-GE3, such as using an ESD wrist strap or mat, and ensure the device is stored in an ESD-protective package.

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SIR804DP-T1-GE3 Overview

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Power Field-Effect Transistor, 60A I(D), 100V, 0.0078ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET