SIR846ADP-T1-GE3 footprint, schematic symbol and 3D model by Vishay

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PCB Footprints

SIR846ADP-T1-GE3 - Vishay PCB footprint - Other - Other - PowerPAK® SO-8 Single_1

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3D Models

SIR846ADP-T1-GE3 - Vishay - 3D model - Other - PowerPAK® SO-8 Single_1

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Datasheet Download Datasheet
Stock & Prices Price & Stock for SIR846ADP-T1-GE3
Part Number SIR846ADP-T1-GE3
Manufacturer Vishay
Pin Count 11
Part Category MOSFET (N-Channel)
Package Category Other
Footprint Name Other - PowerPAK® SO-8 Single_1
Released Date Feb 27, 2020
Last Modified Date Mar 7, 2023 4:10 PM UTC
Pinout / Pin List Click Here (Member Only)

SIR846ADP-T1-GE3 Details

Manufacturer Part Number:
SIR846ADP-T1-GE3
Rohs Code:
Yes
Part Life Cycle Code:
Not Recommended
Package Description:
SOP-8
ECCN Code:
EAR99
Factory Lead Time:
29 Weeks
Manufacturer:
Vishay Intertechnologies
YTEOL:
3
Avalanche Energy Rating (Eas):
80 mJ
Case Connection:
DRAIN
Configuration:
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min:
100 V
Drain Current-Max (ID):
58.6 A
Drain-source On Resistance-Max:
0.0078 Ω
FET Technology:
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code:
R-PDSO-C5
JESD-609 Code:
e3
Moisture Sensitivity Level:
1
Number of Elements:
1
Number of Terminals:
5
Operating Mode:
ENHANCEMENT MODE
Operating Temperature-Max:
150 °C
Package Body Material:
PLASTIC/EPOXY
Package Shape:
RECTANGULAR
Package Style:
SMALL OUTLINE
Peak Reflow Temperature (Cel):
260
Polarity/Channel Type:
N-CHANNEL
Power Dissipation-Max (Abs):
83 W
Pulsed Drain Current-Max (IDM):
200 A
Surface Mount:
YES
Terminal Finish:
Matte Tin (Sn)
Terminal Form:
C BEND
Terminal Position:
DUAL
Time@Peak Reflow Temperature-Max (s):
30
Transistor Application:
SWITCHING
Transistor Element Material:
SILICON

SIR846ADP-T1-GE3 Frequently Asked Questions (FAQs)

The recommended land pattern for SIR846ADP-T1-GE3 can be found in the Vishay Intertechnologies' application note 'Land Pattern Recommendations for SIR Packages' (document number: 28311).
To ensure reliability in high-temperature applications, follow the recommended derating guidelines for the SIR846ADP-T1-GE3, and consider using a thermal interface material (TIM) to improve heat dissipation. Additionally, ensure proper PCB design and layout to minimize thermal resistance.
The maximum allowed voltage transient for the SIR846ADP-T1-GE3 is specified as 80 V for a duration of ≤ 100 ns. Exceeding this limit may damage the device.
Yes, the SIR846ADP-T1-GE3 is suitable for high-frequency switching applications. However, ensure that the device is properly snubbed to minimize ringing and voltage overshoot. Consult the datasheet and application notes for guidance on proper snubbing techniques.
Store the SIR846ADP-T1-GE3 in a dry, cool place, away from direct sunlight and moisture. The recommended storage temperature range is -40°C to 30°C, with a relative humidity of ≤ 60%.

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SIR846ADP-T1-GE3 - Vishay

SIR846ADP-T1-GE3 Details

SIR846ADP-T1-GE3 Frequently Asked Questions (FAQs)

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