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SIR870ADP-T1-GE3 - Vishay

Description: SIR870ADP-T1-GE3 N-Channel MOSFET, 60 A, 100 V, 8-Pin PowerPAK SO Vishay

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SIR870ADP-T1-GE3 - Vishay PCB footprint - Other - Other - PowerPAK-SO-8
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SIR870ADP-T1-GE3 Details

  • Manufacturer Part Number:

    SIR870ADP-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Package Description:

    HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SOP-8

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    29 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    3

  • Avalanche Energy Rating (Eas):

    80 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    60 A

  • Drain-source On Resistance-Max:

    0.007 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-C5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    104 W

  • Pulsed Drain Current-Max (IDM):

    300 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    C BEND

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SIR870ADP-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SIR870ADP-T1-GE3 can be found in the Vishay Intertechnologies' application note AN201, which provides a detailed layout and land pattern recommendation.
  • To ensure reliability in high-temperature applications, it is essential to follow the recommended derating guidelines provided in the datasheet. Additionally, consider using a thermal interface material (TIM) to improve heat transfer between the device and the heat sink.
  • The maximum allowed voltage transient for the SIR870ADP-T1-GE3 is specified in the datasheet as 80 V for a duration of 100 ms. However, it is recommended to consult with Vishay Intertechnologies' application engineers for specific guidance on voltage transient tolerance.
  • Yes, the SIR870ADP-T1-GE3 is suitable for high-frequency switching applications. However, it is crucial to consider the device's switching characteristics, such as rise and fall times, and ensure that the application's switching frequency is within the device's specified operating range.
  • To prevent moisture damage, it is recommended to store the SIR870ADP-T1-GE3 in a dry, cool place with a relative humidity of 50% or less. The devices should be stored in their original packaging or in a sealed bag with desiccant to maintain a low humidity environment.

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SIR870ADP-T1-GE3 Overview

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