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SIR873DP-T1-GE3 - Vishay

Description: VISHAY - SIR873DP-T1-GE3 - MOSFET, P-CH, -150V, -37A, POWERPAK SO

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SIR873DP-T1-GE3 - Vishay - PCB symbol
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PCB Footprints
SIR873DP-T1-GE3 - Vishay PCB footprint - Other - Other - PowerPAK-SO-8
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SIR873DP-T1-GE3 - Vishay - 3D model - Other - PowerPAK-SO-8
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SIR873DP-T1-GE3 Details

  • Manufacturer Part Number:

    SIR873DP-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SOP-8

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    6.12

  • Avalanche Energy Rating (Eas):

    80 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    150 V

  • Drain Current-Max (ID):

    37 A

  • Drain-source On Resistance-Max:

    0.0475 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-F5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    50 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    40

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SIR873DP-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended land pattern for the SIR873DP-T1-GE3 can be found in the Vishay Intertechnologies' application note 'Land Pattern Recommendations for Vishay Power MOSFETs' (document number: 41551).
  • To ensure proper cooling, follow the thermal management guidelines in the datasheet, and consider using a heat sink with a thermal interface material (TIM) to reduce thermal resistance. Additionally, ensure good airflow around the device.
  • The maximum allowed voltage transient for the SIR873DP-T1-GE3 is specified in the datasheet as 80 V for a duration of ≤ 100 ns. Exceeding this limit may damage the device.
  • Yes, the SIR873DP-T1-GE3 is qualified for automotive and high-reliability applications. However, it's essential to review the device's AEC-Q101 qualification and PPAP (Production Part Approval Process) documentation to ensure it meets your specific requirements.
  • To prevent ESD damage, handle the SIR873DP-T1-GE3 in an ESD-controlled environment, use ESD-protective packaging and tools, and follow proper grounding procedures when handling the device.

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SIR873DP-T1-GE3 Overview

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