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SIR878BDP-T1-RE3 - Vishay

Description: VISHAY - SIR878BDP-T1-RE3 - MOSFET, N-CH, 100V, 42.5A, POWERPAK SO

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SIR878BDP-T1-RE3 - Vishay - PCB symbol
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PCB Footprints
SIR878BDP-T1-RE3 - Vishay PCB footprint - Other - Other - PowerPAK® SO-8 Single_1-1
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3D Models
SIR878BDP-T1-RE3 - Vishay - 3D model - Other - PowerPAK® SO-8 Single_1-1
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SIR878BDP-T1-RE3 Details

  • Manufacturer Part Number:

    SIR878BDP-T1-RE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SOP-8

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    24 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5.85

  • Avalanche Energy Rating (Eas):

    11.2 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    42.5 A

  • Drain-source On Resistance-Max:

    0.0144 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    12 pF

  • JESD-30 Code:

    R-PDSO-F5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    62.5 W

  • Pulsed Drain Current-Max (IDM):

    80 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    54 ns

  • Turn-on Time-Max (ton):

    38 ns

SIR878BDP-T1-RE3 Frequently Asked Questions (FAQs)

  • The recommended land pattern for SIR878BDP-T1-RE3 can be found in the Vishay Intertechnologies' application note 'Land Pattern Recommendations for Vishay's Power MOSFETs' (document number: 41551).
  • To ensure reliability in high-temperature applications, follow the recommended derating guidelines for the maximum junction temperature (Tj) and ensure proper thermal management, such as using a heat sink or thermal interface material.
  • The maximum safe operating area (SOA) for the SIR878BDP-T1-RE3 can be found in the datasheet, but it's essential to note that the SOA is dependent on the specific application and operating conditions. Consult with a Vishay Intertechnologies' application engineer for customized guidance.
  • Yes, the SIR878BDP-T1-RE3 is suitable for high-frequency switching applications. However, it's crucial to consider the device's switching characteristics, such as the rise and fall times, and ensure that the application's operating frequency is within the device's specified range.
  • The recommended gate drive voltage for the SIR878BDP-T1-RE3 is typically between 10 V to 15 V, but it's essential to consult the datasheet and application notes for specific guidance on gate drive requirements.

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SIR878BDP-T1-RE3 Overview

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