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SIR880BDP-T1-RE3 - Vishay

Description: MOSFET N-CHANNEL 80-V (D-S)

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PCB Footprints
SIR880BDP-T1-RE3 - Vishay PCB footprint - Other - Other - PowerPAK SO-8 Single
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3D Models
SIR880BDP-T1-RE3 - Vishay  - 3D model - Other - PowerPAK SO-8 Single
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SIR880BDP-T1-RE3 Details

  • Manufacturer Part Number:

    SIR880BDP-T1-RE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SOP-8

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    24 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    45 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    80 V

  • Drain Current-Max (ID):

    70.6 A

  • Drain-source On Resistance-Max:

    0.008 Ω

  • FET Technology:

    TRENCH MOSFET

  • Feedback Cap-Max (Crss):

    11.5 pF

  • JESD-30 Code:

    R-PDSO-F8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    71.4 W

  • Pulsed Drain Current-Max (IDM):

    200 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    40

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    102 ns

  • Turn-on Time-Max (ton):

    202 ns

SIR880BDP-T1-RE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SIR880BDP-T1-RE3 is a 5-pin PowerPAK SO-8 package with a thermal pad. The datasheet provides a recommended land pattern and soldering guidelines.
  • To ensure reliable operation in high-temperature environments, follow the recommended thermal management guidelines, including providing adequate heat sinking, using a thermal interface material, and keeping the junction temperature (Tj) below the maximum rated value of 150°C.
  • The maximum allowed voltage on the gate-source pin (Vgs) of the SIR880BDP-T1-RE3 is ±20V. Exceeding this voltage may damage the device.
  • Yes, the SIR880BDP-T1-RE3 is suitable for high-frequency switching applications. However, ensure that the device is properly driven, and the PCB layout is optimized to minimize parasitic inductance and capacitance. Additionally, consider the device's switching losses and thermal management.
  • The optimal gate resistance (Rg) for the SIR880BDP-T1-RE3 depends on the specific application, including the switching frequency, voltage, and current. A general guideline is to use a gate resistance between 10 Ω and 100 Ω. However, it's recommended to consult the application notes and perform simulations or experiments to determine the optimal Rg value for your specific design.

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