Part Image

SIRA14BDP-T1-GE3 - Vishay

Description: MOSFETs 30V Vds; 20/-16V Vgs PowerPAK SO-8

Download SIRA14BDP-T1-GE3 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
3D Models
SIRA14BDP-T1-GE3 - Vishay  - 3D model
click to zoom
Note! To download footprints and symbols, use the build and request forms below

Build

Launch Build Wizard
Build Wizard not available for this package category!

Request (48 hours)

SIRA14BDP-T1-GE3 Details

  • Manufacturer Part Number:

    SIRA14BDP-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SOP-8

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Date Of Intro:

    2018-10-02

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5.3

  • Avalanche Energy Rating (Eas):

    11.3 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    64 A

  • Drain-source On Resistance-Max:

    0.00538 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    37 pF

  • JESD-30 Code:

    R-PDSO-F5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    36 W

  • Pulsed Drain Current-Max (IDM):

    130 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    40

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    40 ns

  • Turn-on Time-Max (ton):

    30 ns

SIRA14BDP-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended storage condition for SIRA14BDP-T1-GE3 is in a dry, cool place, away from direct sunlight, with a temperature range of -40°C to 125°C and humidity below 60%.
  • While SIRA14BDP-T1-GE3 is suitable for high-frequency applications, its performance may degrade above 100 kHz. It's recommended to consult with a Vishay Intertechnologies representative or perform thorough testing before using it in high-frequency applications.
  • To prevent electrostatic discharge (ESD) damage, handle SIRA14BDP-T1-GE3 components in an ESD-protected environment, use ESD-protective packaging, and follow proper grounding procedures when handling the components.
  • The recommended soldering profile for SIRA14BDP-T1-GE3 is a peak temperature of 260°C, with a dwell time of 10-30 seconds. However, it's recommended to consult the datasheet and follow industry-standard soldering guidelines for specific applications.
  • While SIRA14BDP-T1-GE3 meets the requirements for automotive applications, it's essential to consult with a Vishay Intertechnologies representative to ensure compliance with specific automotive industry standards and regulations.

Trust Checks

No trust score is available for this model.
Trust Score Unavailable
Sponsored

SIRA14BDP-T1-GE3 Overview

Use the download button to access the SIRA14BDP-T1-GE3 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
To find more CAD model downloads similar to this part, try a partial part number search, like SIRA1, or try a keyword search, such as Power Field-Effect Transistors

Parts related to SIRA14BDP-T1-GE3

Showing 0 results

Select Package Category

Package Categories

Datasheet PDF Preview