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SIRA18DP-T1-GE3 - Vishay

Description: Vishay SIRA18DP-T1-GE3 N-channel MOSFET Transistor, 15.5 A, 30 V, 8-Pin SOIC

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SIRA18DP-T1-GE3 - Vishay PCB footprint - Other - Other - SIRA18DP-T1-GE3-1
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SIRA18DP-T1-GE3 - Vishay  - 3D model - Other - SIRA18DP-T1-GE3-1
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SIRA18DP-T1-GE3 Details

  • Manufacturer Part Number:

    SIRA18DP-T1-GE3

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Package Description:

    SOP-8

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    3

  • Avalanche Energy Rating (Eas):

    10 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    33 A

  • Drain-source On Resistance-Max:

    0.0075 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-F5

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    14.7 W

  • Pulsed Drain Current-Max (IDM):

    70 A

  • Surface Mount:

    YES

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SIRA18DP-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended storage condition for SIRA18DP-T1-GE3 is in a dry, cool place, away from direct sunlight and moisture, with a temperature range of -40°C to 125°C.
  • While SIRA18DP-T1-GE3 is suitable for high-frequency applications, its performance may degrade above 100 kHz. It's recommended to consult with a Vishay Intertechnologies representative or perform thorough testing to ensure suitability for your specific application.
  • To prevent electrostatic discharge (ESD) damage, handle SIRA18DP-T1-GE3 components in an ESD-protected environment, wear an ESD wrist strap or use an ESD mat, and avoid touching the component pins or leads.
  • The recommended soldering profile for SIRA18DP-T1-GE3 is a peak temperature of 260°C for 10-15 seconds, with a ramp-up rate of 3°C/s and a ramp-down rate of 6°C/s. However, it's recommended to consult the Vishay Intertechnologies application note for specific guidance.
  • While SIRA18DP-T1-GE3 meets the requirements for automotive applications, it's essential to consult with a Vishay Intertechnologies representative to ensure compliance with specific automotive industry standards and regulations.

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SIRA18DP-T1-GE3 Overview

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