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SIRA24DP-T1-GE3 - Vishay

Description: MOSFET 25V Vds 20V Vgs PowerPAK SO-8

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SIRA24DP-T1-GE3 - Vishay PCB footprint - Other - Other - Power PAK® SO-8 Single_1
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SIRA24DP-T1-GE3 - Vishay  - 3D model - Other - Power PAK® SO-8 Single_1
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SIRA24DP-T1-GE3 Details

  • Manufacturer Part Number:

    SIRA24DP-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SOP-8

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5.3

  • Avalanche Energy Rating (Eas):

    45 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    25 V

  • Drain Current-Max (ID):

    60 A

  • Drain-source On Resistance-Max:

    0.0014 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    197 pF

  • JESD-30 Code:

    R-PDSO-F5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    62.5 W

  • Pulsed Drain Current-Max (IDM):

    150 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    40

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    56 ns

  • Turn-on Time-Max (ton):

    70 ns

SIRA24DP-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended storage condition for SIRA24DP-T1-GE3 is in a dry, cool place, away from direct sunlight, with a temperature range of -40°C to 125°C and humidity below 60%.
  • While the SIRA24DP-T1-GE3 is suitable for high-frequency applications, its performance may degrade above 100 kHz. It's recommended to consult with a Vishay Intertechnologies representative or perform thorough testing to ensure the component meets your specific requirements.
  • To prevent damage, handle the SIRA24DP-T1-GE3 by the body, avoiding touching the leads or glass seal. Use anti-static wrist straps, mats, or other ESD protection methods to prevent electrostatic discharge damage.
  • The maximum allowable voltage derating for the SIRA24DP-T1-GE3 is 80% of the rated voltage. Exceeding this derating may reduce the component's lifespan or cause premature failure.
  • While the SIRA24DP-T1-GE3 is rated for operation up to 125°C, it's essential to consider the component's power dissipation and thermal resistance when operating in high-temperature environments. Consult the datasheet and perform thermal analysis to ensure the component's reliability.

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SIRA24DP-T1-GE3 Overview

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