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SIRA88DP-T1-GE3 - Vishay

Description: Vishay SIRA88DP-T1-GE3 N-channel MOSFET, 45.5 A, 30 V TrenchFET, 8-Pin SO

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PCB Footprints
SIRA88DP-T1-GE3 - Vishay PCB footprint - Other - Other - PowerPAK SO-8 Single
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3D Models
SIRA88DP-T1-GE3 - Vishay  - 3D model - Other - PowerPAK SO-8 Single
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SIRA88DP-T1-GE3 Details

  • Manufacturer Part Number:

    SIRA88DP-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Package Description:

    SOP-8

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Date Of Intro:

    2017-03-21

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5.3

  • Avalanche Energy Rating (Eas):

    5 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    45.5 A

  • Drain-source On Resistance-Max:

    0.0067 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-F5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    100 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SIRA88DP-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended storage condition for SIRA88DP-T1-GE3 is in a dry, cool place, away from direct sunlight, with a temperature range of -40°C to 125°C and humidity below 60%.
  • While SIRA88DP-T1-GE3 is suitable for high-frequency applications, its performance may degrade above 100 kHz. It's recommended to consult with a Vishay Intertechnologies representative or perform thorough testing before using it in high-frequency applications.
  • To prevent damage, handle SIRA88DP-T1-GE3 by the body, avoiding touching the leads or glass seal. Use anti-static wrist straps, mats, or tables to prevent electrostatic discharge. Avoid bending or flexing the leads, and use a vacuum pickup or tweezers to handle the component.
  • The maximum allowable voltage derating for SIRA88DP-T1-GE3 is 80% of the rated voltage. Exceeding this derating may reduce the component's lifespan or cause premature failure.
  • While SIRA88DP-T1-GE3 is not AEC-Q200 qualified, it can be used in automotive applications with proper testing and validation. Consult with a Vishay Intertechnologies representative to discuss specific requirements and ensure the component meets the necessary standards.

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SIRA88DP-T1-GE3 Overview

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