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SIRA99DP-T1-GE3 - Vishay

Description: MOSFET P-Channel 30 V (D-S) MOSFET

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SIRA99DP-T1-GE3 - Vishay PCB footprint - Other - Other - PowerPAK® SO-8 Single_1-1
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SIRA99DP-T1-GE3 - Vishay  - 3D model - Other - PowerPAK® SO-8 Single_1-1
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SIRA99DP-T1-GE3 Details

  • Manufacturer Part Number:

    SIRA99DP-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SOP-8

  • ECCN Code:

    EAR99

  • Date Of Intro:

    2019-02-07

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5.3

  • Avalanche Energy Rating (Eas):

    125 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    195 A

  • Drain-source On Resistance-Max:

    0.0017 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    510 pF

  • JESD-30 Code:

    R-PDSO-F5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    104 W

  • Pulsed Drain Current-Max (IDM):

    400 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    40

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    160 ns

  • Turn-on Time-Max (ton):

    84 ns

SIRA99DP-T1-GE3 Frequently Asked Questions (FAQs)

  • Store the devices in a dry, cool place, away from direct sunlight and moisture. The recommended storage temperature range is -40°C to 30°C, and the relative humidity should be below 60%.
  • While SIRA99DP-T1-GE3 is suitable for high-frequency applications, its performance may degrade above 100 MHz. For frequencies above 100 MHz, consider using a different component or consulting with a Vishay Intertechnologies application engineer.
  • To prevent damage during soldering, use a soldering iron with a temperature below 260°C. Avoid applying excessive force or bending the leads. Use a soldering technique that minimizes the time the device is exposed to high temperatures.
  • To minimize electromagnetic interference (EMI) and ensure optimal performance, keep the PCB layout as compact as possible. Use a ground plane and keep the signal traces short and direct. Avoid routing high-frequency signals near the device.
  • While SIRA99DP-T1-GE3 is a high-reliability component, it is not specifically designed for automotive applications. For automotive applications, consider using AEC-Q200 qualified components or consulting with a Vishay Intertechnologies application engineer.

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