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SIRS4301DP-T1-GE3 - Vishay

Description: Trans MOSFET P-CH 30V 227A T/R

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PCB Footprints
SIRS4301DP-T1-GE3 - Vishay PCB footprint - Other - Other -  PowerPAK® SO-8S BWL
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3D Models
SIRS4301DP-T1-GE3 - Vishay  - 3D model - Other -  PowerPAK® SO-8S BWL
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SIRS4301DP-T1-GE3 Details

  • Manufacturer Part Number:

    SIRS4301DP-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SO-8S, 8 PIN

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    125 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    227 A

  • Drain-source On Resistance-Max:

    0.0023 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    1175 pF

  • JESD-30 Code:

    R-PDSO-N8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    132 W

  • Pulsed Drain Current-Max (IDM):

    350 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    40

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    700 ns

  • Turn-on Time-Max (ton):

    480 ns

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SIRS4301DP-T1-GE3 Overview

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