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SIRS5100DP-T1-GE3 - Vishay

Description: MOSFETs N-Chnnel 100-V (D-S) MOSFET SC70-6, 212 mohm a. 10V , 270 mohm a. 4.5V

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SIRS5100DP-T1-GE3 - Vishay PCB footprint - Other - Other - PowerPAK® SO-8S BWL_26
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SIRS5100DP-T1-GE3 - Vishay  - 3D model - Other - PowerPAK® SO-8S BWL_26
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SIRS5100DP-T1-GE3 Details

  • Manufacturer Part Number:

    SIRS5100DP-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SO-8S, 8 PIN

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    125 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    241 A

  • Drain-source On Resistance-Max:

    0.0029 Ω

  • FET Technology:

    TRENCH MOSFET

  • Feedback Cap-Max (Crss):

    19 pF

  • JESD-30 Code:

    R-PDSO-N8

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    278 W

  • Pulsed Drain Current-Max (IDM):

    400 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    40

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    90 ns

  • Turn-on Time-Max (ton):

    70 ns

SIRS5100DP-T1-GE3 Frequently Asked Questions (FAQs)

  • Vishay recommends a 2-layer PCB with a thermal pad on the bottom layer, connected to a large copper area on the top layer. This helps to dissipate heat efficiently. A detailed layout guide can be found in the Vishay application note 'Thermal Management of Synchronous Buck Regulators'.
  • To ensure proper biasing during startup, Vishay recommends applying a voltage ramp to the VIN pin, with a slew rate of 1-10 mV/μs. This helps to prevent excessive inrush current and ensures the device starts up correctly.
  • Vishay recommends using a low-ESR ceramic capacitor with a value of 10-22 μF, placed as close as possible to the device. This helps to filter out high-frequency noise and ensure stable operation.
  • For low-power standby, Vishay suggests using the EN pin to disable the device when not in use. Additionally, the device can be optimized for low-power operation by adjusting the switching frequency and using a low-quiescent-current mode.
  • The maximum allowed PCB temperature during operation is 105°C, as specified in the datasheet. Exceeding this temperature may affect the device's reliability and performance.

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SIRS5100DP-T1-GE3 Overview

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