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SIS178LDN-T1-GE3 - Vishay

Description: MOSFET N-CHANNEL 70-V (D-S)

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SIS178LDN-T1-GE3 - Vishay PCB footprint - Other - Other - SIS178LDN-T1-GE3-1
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SIS178LDN-T1-GE3 - Vishay  - 3D model - Other - SIS178LDN-T1-GE3-1
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SIS178LDN-T1-GE3 Details

  • Manufacturer Part Number:

    SIS178LDN-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    24 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    11.25 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    70 V

  • Drain Current-Max (ID):

    45.3 A

  • Drain-source On Resistance-Max:

    0.0135 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    4 pF

  • JESD-30 Code:

    S-PDSO-F5

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    39 W

  • Pulsed Drain Current-Max (IDM):

    100 A

  • Surface Mount:

    YES

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    40

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    52 ns

  • Turn-on Time-Max (ton):

    32 ns

SIS178LDN-T1-GE3 Frequently Asked Questions (FAQs)

  • Vishay recommends a PCB layout with a thermal pad connected to a large copper area to dissipate heat efficiently. A minimum of 2 oz copper thickness is recommended, and the thermal pad should be connected to a ground plane or a heat sink.
  • Vishay recommends using a soldering profile with a peak temperature of 260°C (500°F) for a maximum of 10 seconds. The device should be soldered using a solder with a melting point above 217°C (423°F).
  • The maximum allowed voltage on the gate pin is ±20 V, but it's recommended to keep it within ±15 V to ensure reliable operation and prevent damage to the device.
  • Yes, the SIS178LDN-T1-GE3 is suitable for high-frequency switching applications up to 100 kHz. However, it's essential to consider the device's switching losses, thermal performance, and PCB layout to ensure reliable operation.
  • Vishay recommends handling the device with ESD-protective equipment and following proper ESD-handling procedures. The device should be stored in an ESD-protective package, and it's recommended to use an ESD-protection circuit on the PCB.

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SIS178LDN-T1-GE3 Overview

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