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SIS410DN-T1-GE3 - Vishay

Description: MOSFET 20V Vds 20V Vgs PowerPAK 1212-8

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PCB Footprints
SIS410DN-T1-GE3 - Vishay PCB footprint - Other - Other - SIS410DN-T1-GE3-4
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3D Models
SIS410DN-T1-GE3 - Vishay  - 3D model - Other - SIS410DN-T1-GE3-4
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SIS410DN-T1-GE3 Details

  • Manufacturer Part Number:

    SIS410DN-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    HALOGEN FREE AND ROHS COMPLIANT PACKAGE, LEADLESS, 1212-8, POWERPAK-8

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5.3

  • Avalanche Energy Rating (Eas):

    61 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    22 A

  • Drain-source On Resistance-Max:

    0.0048 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    S-PDSO-C5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    5.2 W

  • Pulsed Drain Current-Max (IDM):

    60 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    C BEND

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SIS410DN-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended storage condition for SIS410DN-T1-GE3 is in a dry, cool place with a temperature range of 20°C to 30°C (68°F to 86°F) and humidity below 60%.
  • While SIS410DN-T1-GE3 has a high junction temperature rating of 150°C, it's essential to consider the thermal resistance and power dissipation when operating in high-temperature environments. Consult with a thermal expert or perform thorough thermal analysis to ensure safe operation.
  • To ensure reliability, follow proper handling, storage, and soldering procedures. Implement a robust design with adequate thermal management, and consider using a thermally conductive interface material. Additionally, perform thorough testing and validation to ensure the device meets your application's requirements.
  • The recommended soldering profile for SIS410DN-T1-GE3 is a peak temperature of 260°C (500°F) with a dwell time of 10-30 seconds. Ensure the soldering process is within the specified temperature range to prevent damage to the device.
  • While SIS410DN-T1-GE3 is a high-reliability device, it's essential to consult with the manufacturer and ensure the device meets the specific requirements of the automotive industry, such as AEC-Q101 qualification. Additionally, perform thorough testing and validation to ensure the device meets the application's requirements.

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SIS410DN-T1-GE3 Overview

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