SIS412DN-T1-GE3 - Vishay

SIS412DN-T1-GE3 Details

• Manufacturer Part Number:

  SIS412DN-T1-GE3

• Rohs Code:

  Yes

• Part Life Cycle Code:

  Active

• Package Description:

  HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, 1212-8, POWERPAK-8

• Country Of Origin:

  Israel

• ECCN Code:

  EAR99

• Manufacturer:

  Vishay Intertechnologies

• YTEOL:

  5

• Avalanche Energy Rating (Eas):

  1.25 mJ

• Case Connection:

  DRAIN

• Configuration:

  SINGLE WITH BUILT-IN DIODE

• DS Breakdown Voltage-Min:

  30 V

• Drain Current-Max (ID):

  8.7 A

• Drain-source On Resistance-Max:

  0.024 Ω

• FET Technology:

  METAL-OXIDE SEMICONDUCTOR

• JESD-30 Code:

  S-XDSO-C5

• JESD-609 Code:

  e3

• Moisture Sensitivity Level:

  1

• Number of Elements:

  1

• Number of Terminals:

  5

• Operating Mode:

  ENHANCEMENT MODE

• Operating Temperature-Max:

  150 °C

• Package Body Material:

  UNSPECIFIED

• Package Shape:

  SQUARE

• Package Style:

  SMALL OUTLINE

• Peak Reflow Temperature (Cel):

  260

• Polarity/Channel Type:

  N-CHANNEL

• Power Dissipation-Max (Abs):

  15.6 W

• Pulsed Drain Current-Max (IDM):

  30 A

• Qualification Status:

  Not Qualified

• Surface Mount:

  YES

• Terminal Finish:

  Matte Tin (Sn) - annealed

• Terminal Form:

  C BEND

• Terminal Position:

  DUAL

• Time@Peak Reflow Temperature-Max (s):

  40

• Transistor Application:

  SWITCHING

• Transistor Element Material:

  SILICON