SIS413DN-T1-GE3 - Vishay

SIS413DN-T1-GE3 Details

• Manufacturer Part Number:

  SIS413DN-T1-GE3

• Rohs Code:

  Yes

• Part Life Cycle Code:

  Active

• Country Of Origin:

  Israel

• ECCN Code:

  EAR99

• Factory Lead Time:

  15 Weeks

• Manufacturer:

  Vishay Intertechnologies

• YTEOL:

  5

• Avalanche Energy Rating (Eas):

  20 mJ

• Case Connection:

  DRAIN

• Configuration:

  SINGLE WITH BUILT-IN DIODE

• DS Breakdown Voltage-Min:

  30 V

• Drain Current-Max (ID):

  18 A

• Drain-source On Resistance-Max:

  0.0094 Ω

• FET Technology:

  METAL-OXIDE SEMICONDUCTOR

• JESD-30 Code:

  S-PDSO-C5

• Moisture Sensitivity Level:

  1

• Number of Elements:

  1

• Number of Terminals:

  5

• Operating Mode:

  ENHANCEMENT MODE

• Package Body Material:

  PLASTIC/EPOXY

• Package Shape:

  SQUARE

• Package Style:

  SMALL OUTLINE

• Peak Reflow Temperature (Cel):

  245

• Polarity/Channel Type:

  P-CHANNEL

• Pulsed Drain Current-Max (IDM):

  70 A

• Surface Mount:

  YES

• Terminal Finish:

  Matte Tin (Sn)

• Terminal Form:

  C BEND

• Terminal Position:

  DUAL

• Time@Peak Reflow Temperature-Max (s):

  40

• Transistor Application:

  SWITCHING

• Transistor Element Material:

  SILICON