Please enter a minimum 3 letters or numbers
Technical Content
Part Image

SIS415DNT-T1-GE3 - Vishay

Description: Vishay SIS415DNT-T1-GE3 P-channel MOSFET Transistor, 22.6 A, -20 V, 8-Pin PowerPAK 1212

Download SIS415DNT-T1-GE3 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
Send part feedback
Symbol
SIS415DNT-T1-GE3 - Vishay - PCB symbol
click to zoom
PCB Footprints
SIS415DNT-T1-GE3 - Vishay PCB footprint - Other - Other - Thin PowerPAK® 1212-8T
click to zoom
3D Models
SIS415DNT-T1-GE3 - Vishay - 3D model - Other - Thin PowerPAK® 1212-8T
click to zoom

SIS415DNT-T1-GE3 Details

  • Manufacturer Part Number:

    SIS415DNT-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    HALOGEN FREE AND ROHS COMPLIANT, THIN, 1212-8, POWERPAK-8

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    19 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5.3

  • Avalanche Energy Rating (Eas):

    20 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    35 A

  • Drain-source On Resistance-Max:

    0.004 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    S-PDSO-F5

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    P-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    80 A

  • Surface Mount:

    YES

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SIS415DNT-T1-GE3 Frequently Asked Questions (FAQs)

  • Store the device in a dry, cool place, away from direct sunlight, and avoid exposure to moisture, extreme temperatures, and mechanical stress.
  • Handle the device in an ESD-protected environment, wear an ESD wrist strap or use an ESD mat, and avoid touching the device's pins or leads.
  • The recommended soldering temperature is 260°C (500°F) for 10 seconds, and the device should be soldered using a soldering iron with a temperature-controlled tip.
  • Yes, but you need to consult with Vishay Intertechnologies' sales team to discuss the device's qualification and certification for high-reliability or aerospace applications.
  • Purchase the device from authorized distributors or Vishay Intertechnologies' direct sales channels, and verify the device's packaging, labeling, and markings for authenticity.

Trust Checks

This model has been provided by an expert contributor.
Expert Contribution
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

SIS415DNT-T1-GE3 Overview

Use the download button to access the SIS415DNT-T1-GE3 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like SIS41, or try a keyword search, such as Power Field-Effect Transistors

Parts related to SIS415DNT-T1-GE3

Showing 0 results

Part Image

← Prev Next →
About Us Contact Us Terms of Service Do not sell or share my personal information Privacy Policy Digital Services Act Library Loader Twitter LinkedIn

All content Copyright © 2020, Supplyframe.com. All rights reserved. Back to top ↑