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SIS427EDN-T1-GE3 - Vishay

Description: MOSFET -30V Vds 25V Vgs PowerPAK 1212-8

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SIS427EDN-T1-GE3 - Vishay PCB footprint - Other - Other - PowerPAK® 1212-8 Single_2
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3D Models
SIS427EDN-T1-GE3 - Vishay  - 3D model - Other - PowerPAK® 1212-8 Single_2
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SIS427EDN-T1-GE3 Details

  • Manufacturer Part Number:

    SIS427EDN-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    19 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5.4

  • Avalanche Energy Rating (Eas):

    31.25 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    50 A

  • Drain-source On Resistance-Max:

    0.0106 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    S-PDSO-C5

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    P-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    110 A

  • Surface Mount:

    YES

  • Terminal Form:

    C BEND

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SIS427EDN-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended storage condition for SIS427EDN-T1-GE3 is in a dry, cool place, away from direct sunlight and moisture, with a temperature range of -40°C to 125°C.
  • Yes, SIS427EDN-T1-GE3 is a high-reliability device, suitable for use in high-reliability applications, such as aerospace, defense, and medical devices, due to its high-quality manufacturing process and rigorous testing.
  • To prevent electrostatic discharge (ESD) damage, handle SIS427EDN-T1-GE3 with an ESD wrist strap or mat, and ensure that all equipment and tools are properly grounded. Avoid touching the device's pins or leads.
  • The maximum operating temperature range for SIS427EDN-T1-GE3 is -40°C to 150°C, with a maximum junction temperature of 175°C.
  • Yes, SIS427EDN-T1-GE3 is designed to withstand high-vibration environments, with a vibration rating of 10G peak acceleration, making it suitable for use in applications such as aerospace, automotive, and industrial control systems.

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SIS427EDN-T1-GE3 Overview

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