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SIS447DN-T1-GE3 - Vishay

Description: VISHAY - SIS447DN-T1-GE3 - Power MOSFET, P Channel, 20 V, 18 A, 0.0058 ohm, PowerPAK 1212, Surface Mount

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SIS447DN-T1-GE3 - Vishay PCB footprint - Other - Other - PowerPAK 1212-8 Single
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SIS447DN-T1-GE3 - Vishay  - 3D model - Other - PowerPAK 1212-8 Single
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SIS447DN-T1-GE3 Details

  • Manufacturer Part Number:

    SIS447DN-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    19 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5.3

  • Avalanche Energy Rating (Eas):

    20 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    18 A

  • Drain-source On Resistance-Max:

    0.0071 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    637 pF

  • JESD-30 Code:

    S-PDSO-F5

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    52 W

  • Pulsed Drain Current-Max (IDM):

    100 A

  • Surface Mount:

    YES

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    170 ns

  • Turn-on Time-Max (ton):

    44 ns

SIS447DN-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SIS447DN-T1-GE3 is a standard SOT23-3L package with a 1.3mm x 1.3mm body size. A minimum pad size of 0.8mm x 0.8mm is recommended for reliable soldering.
  • To ensure proper biasing, connect the input pin (pin 1) to a voltage source (e.g., VCC) through a resistor (e.g., 1kΩ) and a capacitor (e.g., 100nF) in parallel. This helps to filter out noise and provides a stable input voltage.
  • The SIS447DN-T1-GE3 is rated for operation from -40°C to +125°C. However, it's recommended to operate within the -20°C to +85°C range for optimal performance and reliability.
  • While the SIS447DN-T1-GE3 is designed for general-purpose use, it's not optimized for high-frequency applications. For frequencies above 100 kHz, consider using a specialized high-frequency Schottky diode or consult with a Vishay application engineer for guidance.
  • To prevent electrostatic discharge (ESD) damage, use proper ESD handling procedures, such as wearing an ESD strap, using an ESD mat, and storing the devices in ESD-protective packaging. Additionally, consider adding ESD protection circuits in your design.

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SIS447DN-T1-GE3 Overview

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