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SIS452DN-T1-GE3 - Vishay

Description: MOSFET N-CH 12V 35A PPAK1212-8

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SIS452DN-T1-GE3 - Vishay - PCB symbol
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PCB Footprints
SIS452DN-T1-GE3 - Vishay PCB footprint - Other - Other - PowerPAK 1212-8 Single
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3D Models
SIS452DN-T1-GE3 - Vishay - 3D model - Other - PowerPAK 1212-8 Single
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SIS452DN-T1-GE3 Details

  • Manufacturer Part Number:

    SIS452DN-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, 1212-8, POWERPAK-8

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    45 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    12 V

  • Drain Current-Max (ID):

    35 A

  • Drain-source On Resistance-Max:

    0.0048 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    S-PDSO-C5

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    52 W

  • Pulsed Drain Current-Max (IDM):

    100 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    C BEND

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SIS452DN-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SIS452DN-T1-GE3 is a standard SOT23-3L package with a 1.3mm x 1.3mm body size. A minimum pad size of 0.8mm x 0.8mm is recommended for reliable soldering.
  • To ensure reliable operation in high-temperature environments, ensure that the device is operated within its specified temperature range (-40°C to 150°C). Additionally, provide adequate heat sinking and thermal management to prevent overheating.
  • The maximum allowed voltage on the input pins of the SIS452DN-T1-GE3 is 5.5V. Exceeding this voltage may damage the device.
  • Yes, the SIS452DN-T1-GE3 is suitable for high-frequency applications up to 1 GHz. However, ensure that the device is properly decoupled and that the PCB layout is optimized for high-frequency operation.
  • Handle the SIS452DN-T1-GE3 with ESD-protective equipment and follow proper ESD handling procedures to prevent damage. The device has an ESD rating of 2 kV human body model (HBM) and 150 V machine model (MM).

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SIS452DN-T1-GE3 Overview

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