HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, 1212-8, POWERPAK-8
ECCN Code:
EAR99
Factory Lead Time:
15 Weeks
Manufacturer:
Vishay Intertechnologies
YTEOL:
5.3
Avalanche Energy Rating (Eas):
45 mJ
Case Connection:
DRAIN
Configuration:
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min:
20 V
Drain Current-Max (ID):
35 A
Drain-source On Resistance-Max:
0.0054 Ω
FET Technology:
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code:
S-PDSO-C5
JESD-609 Code:
e3
Number of Elements:
1
Number of Terminals:
5
Operating Mode:
ENHANCEMENT MODE
Operating Temperature-Max:
150 °C
Package Body Material:
PLASTIC/EPOXY
Package Shape:
SQUARE
Package Style:
SMALL OUTLINE
Peak Reflow Temperature (Cel):
260
Polarity/Channel Type:
N-CHANNEL
Power Dissipation-Max (Abs):
52 W
Pulsed Drain Current-Max (IDM):
100 A
Qualification Status:
Not Qualified
Surface Mount:
YES
Terminal Finish:
Matte Tin (Sn)
Terminal Form:
C BEND
Terminal Position:
DUAL
Time@Peak Reflow Temperature-Max (s):
40
Transistor Application:
SWITCHING
Transistor Element Material:
SILICON
SIS454DN-T1-GE3 Frequently Asked Questions (FAQs)
The recommended PCB footprint for the SIS454DN-T1-GE3 is a standard SOT23-3L package with a 1.3mm x 1.3mm body size. A minimum pad size of 0.6mm x 0.6mm is recommended for reliable soldering.
To ensure reliable operation in high-temperature environments, it's essential to follow proper thermal management practices, such as providing adequate heat sinking, using a thermally conductive PCB material, and minimizing power dissipation. Additionally, the device should be operated within its specified temperature range of -40°C to 150°C.
The maximum allowed voltage on the input pins of the SIS454DN-T1-GE3 is 5.5V. Exceeding this voltage may cause damage to the device or affect its reliability.
Yes, the SIS454DN-T1-GE3 can be used in switching regulator applications. However, it's essential to ensure that the device is operated within its specified frequency range and that the input voltage is properly filtered to prevent noise and oscillations.
To handle ESD protection when working with the SIS454DN-T1-GE3, it's recommended to follow standard ESD handling practices, such as using an ESD wrist strap, ESD mat, or ESD bag. Additionally, the device should be handled in a static-free environment, and all equipment should be grounded.
Trust Checks
This model has been provided by an expert contributor.
Expert Contribution
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored
SIS454DN-T1-GE3 Overview
Use the download button to access the SIS454DN-T1-GE3 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like SIS45,
or try a keyword search, such as Power Field-Effect Transistors
