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SIS488DN-T1-GE3 - Vishay

Description: MOSFET 40V 5.5mOhm@10V 40A N-CH

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SIS488DN-T1-GE3 - Vishay - PCB symbol
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PCB Footprints
SIS488DN-T1-GE3 - Vishay PCB footprint - Other - Other - PowerPAK-1212-8
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SIS488DN-T1-GE3 - Vishay - 3D model - Other - PowerPAK-1212-8
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SIS488DN-T1-GE3 Details

  • Manufacturer Part Number:

    SIS488DN-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Package Description:

    HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, 1212-8, POWERPAK-8

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    29 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    3

  • Avalanche Energy Rating (Eas):

    20 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    40 A

  • Drain-source On Resistance-Max:

    0.0055 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    S-PDSO-C5

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    100 A

  • Surface Mount:

    YES

  • Terminal Form:

    C BEND

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SIS488DN-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended soldering temperature profile is 260°C for 10 seconds, with a peak temperature of 240°C. It's essential to follow the recommended profile to prevent damage to the device.
  • To ensure proper cooling, provide a heat sink or a thermal pad with a thermal conductivity of at least 1 W/m-K. The device's thermal resistance (Rth) is 10°C/W, so a heat sink or thermal pad can help reduce the junction temperature.
  • The maximum allowable voltage transient is 1.5 times the rated voltage (48V) for a duration of 100 ms. Exceeding this limit may damage the device.
  • While the SIS488DN-T1-GE3 is a Schottky rectifier diode, it's not suitable for high-frequency switching applications (>100 kHz) due to its relatively high reverse recovery time (trr) of 50 ns. For high-frequency applications, consider using a faster diode with a lower trr.
  • To prevent electrostatic discharge (ESD) damage, handle the device in an ESD-protected environment, wear an ESD strap, and use ESD-safe tools and materials. The SIS488DN-T1-GE3 has a human body model (HBM) ESD rating of 2 kV.

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SIS488DN-T1-GE3 Overview

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