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SIS698DN-T1-GE3 - Vishay

Description: Trans MOSFET N-CH 100V 6.9A 8-Pin PowerPAK 1212 T/R

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PCB Footprints
SIS698DN-T1-GE3 - Vishay PCB footprint - Other - Other - PowerPAK® 1212-8 Single_2
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3D Models
SIS698DN-T1-GE3 - Vishay  - 3D model - Other - PowerPAK® 1212-8 Single_2
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SIS698DN-T1-GE3 Details

  • Manufacturer Part Number:

    SIS698DN-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, 1212-8, POWERPAK-8

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    13 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5.6

  • Avalanche Energy Rating (Eas):

    1.25 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    6.9 A

  • Drain-source On Resistance-Max:

    0.195 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-C5

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    19.8 W

  • Pulsed Drain Current-Max (IDM):

    10 A

  • Surface Mount:

    YES

  • Terminal Form:

    C BEND

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SIS698DN-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SIS698DN-T1-GE3 is a standard SOD-123 package with a minimum pad size of 1.3 mm x 1.3 mm and a maximum pad size of 1.5 mm x 1.5 mm, with a 0.5 mm spacing between pads.
  • To ensure reliable soldering, use a soldering iron with a temperature range of 250°C to 260°C, and apply a solder flux with a moderate activity level. Avoid using excessive solder or flux, and ensure the component is properly aligned on the PCB.
  • The maximum allowed voltage derating for the SIS698DN-T1-GE3 is 10% of the rated voltage, which is 698 V. Therefore, the maximum allowed voltage derating is 69.8 V.
  • The SIS698DN-T1-GE3 is rated for operation up to 150°C, but it's recommended to derate the voltage and current ratings according to the temperature derating curve provided in the datasheet. Above 125°C, the device's reliability and performance may be affected.
  • Handle the SIS698DN-T1-GE3 with ESD-protective equipment, such as wrist straps, mats, or bags, to prevent electrostatic discharge damage. Ensure the workspace is ESD-protected, and avoid touching the component's pins or leads.

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SIS698DN-T1-GE3 Overview

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