HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, 1212-8, POWERPAK-8
ECCN Code:
EAR99
Factory Lead Time:
29 Weeks
Manufacturer:
Vishay Intertechnologies
YTEOL:
3
Avalanche Energy Rating (Eas):
11.25 mJ
Case Connection:
DRAIN
Configuration:
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min:
60 V
Drain Current-Max (ID):
40 A
Drain-source On Resistance-Max:
0.0085 Ω
FET Technology:
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code:
S-PDSO-F5
JESD-609 Code:
e3
Moisture Sensitivity Level:
1
Number of Elements:
1
Number of Terminals:
5
Operating Mode:
ENHANCEMENT MODE
Package Body Material:
PLASTIC/EPOXY
Package Shape:
SQUARE
Package Style:
SMALL OUTLINE
Peak Reflow Temperature (Cel):
260
Polarity/Channel Type:
N-CHANNEL
Pulsed Drain Current-Max (IDM):
100 A
Surface Mount:
YES
Terminal Finish:
Matte Tin (Sn) - annealed
Terminal Form:
FLAT
Terminal Position:
DUAL
Time@Peak Reflow Temperature-Max (s):
30
Transistor Application:
SWITCHING
Transistor Element Material:
SILICON
SIS862DN-T1-GE3 Frequently Asked Questions (FAQs)
The recommended storage condition for SIS862DN-T1-GE3 is in a dry, cool place with a temperature range of 20°C to 30°C (68°F to 86°F) and humidity below 60%.
Yes, the SIS862DN-T1-GE3 is suitable for high-reliability applications due to its robust design, high-quality materials, and rigorous testing procedures. However, it's essential to follow proper design, assembly, and testing guidelines to ensure the component meets the required reliability standards.
To prevent ESD damage, handle the SIS862DN-T1-GE3 with anti-static wrist straps, mats, or other ESD-protective equipment. Ensure the workspace and tools are also ESD-safe. Avoid touching the component's pins or leads, and use ESD-safe packaging and storage materials.
The maximum allowable power dissipation for the SIS862DN-T1-GE3 is dependent on the operating conditions, such as ambient temperature and airflow. Refer to the datasheet for specific power dissipation ratings and thermal resistance values to ensure safe operation.
The SIS862DN-T1-GE3 is rated for operation up to 150°C (302°F). However, it's essential to consider the component's power dissipation, thermal resistance, and derating factors when operating in high-temperature environments to prevent overheating and ensure reliable operation.
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SIS862DN-T1-GE3 Overview
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