SIS892ADN-T1-GE3 - Vishay

SIS892ADN-T1-GE3 Details

• Manufacturer Part Number:

  SIS892ADN-T1-GE3

• Rohs Code:

  Yes

• Part Life Cycle Code:

  Not Recommended

• Package Description:

  HALEGEN FREE AND ROHS COMPLIANT, 1212-8, POWERPAK-8

• ECCN Code:

  EAR99

• HTS Code:

  8541.29.00.95

• Factory Lead Time:

  29 Weeks

• Manufacturer:

  Vishay Intertechnologies

• YTEOL:

  3

• Avalanche Energy Rating (Eas):

  5 mJ

• Case Connection:

  DRAIN

• Configuration:

  SINGLE WITH BUILT-IN DIODE

• DS Breakdown Voltage-Min:

  100 V

• Drain Current-Max (ID):

  28 A

• Drain-source On Resistance-Max:

  0.033 Ω

• FET Technology:

  METAL-OXIDE SEMICONDUCTOR

• JESD-30 Code:

  S-PDSO-C5

• Moisture Sensitivity Level:

  1

• Number of Elements:

  1

• Number of Terminals:

  5

• Operating Mode:

  ENHANCEMENT MODE

• Operating Temperature-Max:

  150 °C

• Package Body Material:

  PLASTIC/EPOXY

• Package Shape:

  SQUARE

• Package Style:

  SMALL OUTLINE

• Polarity/Channel Type:

  N-CHANNEL

• Power Dissipation-Max (Abs):

  52 W

• Pulsed Drain Current-Max (IDM):

  40 A

• Surface Mount:

  YES

• Terminal Finish:

  Pure Matte Tin (Sn) - annealed

• Terminal Form:

  C BEND

• Terminal Position:

  DUAL

• Transistor Application:

  SWITCHING

• Transistor Element Material:

  SILICON