SIS892DN-T1-GE3 footprint, schematic symbol and 3D model by Vishay

Symbol

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PCB Footprints

SIS892DN-T1-GE3 - Vishay PCB footprint - Other - Other - PowerPAK® 1212-8 Single_2-3

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3D Models

SIS892DN-T1-GE3 - Vishay - 3D model - Other - PowerPAK® 1212-8 Single_2-3

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Datasheet Download Datasheet
Stock & Prices Price & Stock for SIS892DN-T1-GE3
Part Number SIS892DN-T1-GE3
Manufacturer Vishay
Pin Count 8
Part Category MOSFET (N-Channel)
Package Category Other
Footprint Name Other - PowerPAK® 1212-8 Single_2-3
Released Date May 21, 2020
Last Modified Date Mar 7, 2023 4:10 PM UTC
Pinout / Pin List Click Here (Member Only)

SIS892DN-T1-GE3 Details

Manufacturer Part Number:
SIS892DN-T1-GE3
Rohs Code:
Yes
Part Life Cycle Code:
Not Recommended
Package Description:
HALOGEN FREE AND ROHS COMPLIANT, 1212-8, POWERPAK-8
ECCN Code:
EAR99
Factory Lead Time:
29 Weeks
Manufacturer:
Vishay Intertechnologies
YTEOL:
3
Avalanche Energy Rating (Eas):
5 mJ
Case Connection:
DRAIN
Configuration:
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min:
100 V
Drain Current-Max (ID):
30 A
Drain-source On Resistance-Max:
0.029 Ω
FET Technology:
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code:
S-PDSO-C5
Number of Elements:
1
Number of Terminals:
5
Operating Mode:
ENHANCEMENT MODE
Operating Temperature-Max:
150 °C
Package Body Material:
PLASTIC/EPOXY
Package Shape:
SQUARE
Package Style:
SMALL OUTLINE
Peak Reflow Temperature (Cel):
260
Polarity/Channel Type:
N-CHANNEL
Power Dissipation-Max (Abs):
52 W
Pulsed Drain Current-Max (IDM):
50 A
Surface Mount:
YES
Terminal Form:
C BEND
Terminal Position:
DUAL
Time@Peak Reflow Temperature-Max (s):
40
Transistor Application:
SWITCHING
Transistor Element Material:
SILICON

SIS892DN-T1-GE3 Frequently Asked Questions (FAQs)

The recommended PCB footprint for the SIS892DN-T1-GE3 is a standard SOT23-6 package with a 1.5mm x 1.5mm body size. A minimum pad size of 0.5mm x 0.5mm is recommended for reliable soldering.
To ensure reliable operation in high-temperature environments, ensure that the device is operated within its specified temperature range (-40°C to 150°C). Additionally, provide adequate heat sinking and thermal management to prevent overheating.
The maximum allowed voltage on the input pins of the SIS892DN-T1-GE3 is 5.5V. Exceeding this voltage may cause damage to the device.
Yes, the SIS892DN-T1-GE3 is suitable for high-frequency switching applications up to 100 kHz. However, ensure that the device is properly bypassed and decoupled to minimize noise and ringing.
Handle the SIS892DN-T1-GE3 with ESD-protective equipment and follow proper ESD handling procedures to prevent damage. The device has an ESD rating of 2 kV human body model (HBM) and 200 V machine model (MM).

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SIS892DN-T1-GE3 Overview

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SIS892DN-T1-GE3 - Vishay

SIS892DN-T1-GE3 Details

SIS892DN-T1-GE3 Frequently Asked Questions (FAQs)

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SIS892DN-T1-GE3 Overview

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