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SISA10DN-T1-GE3 - Vishay

Description: Vishay SISA10DN-T1-GE3 N-channel MOSFET Transistor, 30 A, 30 V, 8-Pin PowerPAK 1212

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SISA10DN-T1-GE3 - Vishay PCB footprint - Other - Other - PowerPAK® 1212-8 Single_2-2
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SISA10DN-T1-GE3 Details

  • Manufacturer Part Number:

    SISA10DN-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Package Description:

    HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, 1212-8, POWERPAK-8

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    3

  • Avalanche Energy Rating (Eas):

    20 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    30 A

  • Drain-source On Resistance-Max:

    0.0037 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    S-PDSO-F5

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    240

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    39 W

  • Pulsed Drain Current-Max (IDM):

    80 A

  • Surface Mount:

    YES

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    40

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SISA10DN-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended storage condition for SISA10DN-T1-GE3 is in a dry, cool place with a temperature range of 20°C to 30°C (68°F to 86°F) and humidity below 60%.
  • Yes, SISA10DN-T1-GE3 is suitable for high-reliability applications due to its high-quality construction and rigorous testing. However, it's essential to follow proper design, assembly, and testing procedures to ensure the component meets the required reliability standards.
  • To prevent electrostatic discharge (ESD) damage, handle SISA10DN-T1-GE3 components in an ESD-protected environment, wear ESD-protective wrist straps or clothing, and use ESD-safe packaging and storage materials.
  • The maximum allowable voltage derating for SISA10DN-T1-GE3 is typically 80% of the rated voltage. However, it's recommended to consult the datasheet and application notes for specific derating guidelines.
  • SISA10DN-T1-GE3 is rated for operation up to 150°C (302°F). However, it's essential to consider the component's power dissipation, thermal resistance, and surrounding environment to ensure reliable operation in high-temperature applications.

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