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SISA40DN-T1-GE3 - Vishay

Description: MOSFET 20V Vds 12V Vgs PowerPAK 1212-8

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SISA40DN-T1-GE3 - Vishay PCB footprint - Other - Other - PowerPAK 1212-8 Single
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SISA40DN-T1-GE3 - Vishay  - 3D model - Other - PowerPAK 1212-8 Single
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SISA40DN-T1-GE3 Details

  • Manufacturer Part Number:

    SISA40DN-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    12 Weeks

  • Date Of Intro:

    2018-07-08

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5.3

  • Avalanche Energy Rating (Eas):

    20 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    162 A

  • Drain-source On Resistance-Max:

    0.0042 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    72 pF

  • JESD-30 Code:

    S-PDSO-F5

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    52 W

  • Pulsed Drain Current-Max (IDM):

    150 A

  • Surface Mount:

    YES

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    78 ns

  • Turn-on Time-Max (ton):

    34 ns

SISA40DN-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended storage condition for SISA40DN-T1-GE3 is in a dry, cool place with a temperature range of 20°C to 30°C (68°F to 86°F) and humidity below 60%.
  • Yes, SISA40DN-T1-GE3 is suitable for high-reliability applications due to its robust design, high-quality materials, and rigorous testing procedures. However, it's essential to follow proper design, assembly, and testing guidelines to ensure the component meets the required reliability standards.
  • To prevent electrostatic discharge (ESD) damage, handle SISA40DN-T1-GE3 components in an ESD-protected environment, wear ESD-protective wrist straps or clothing, and use ESD-safe tools and materials. Ensure that the component is stored in its original packaging or an ESD-safe container when not in use.
  • The maximum allowable power dissipation for SISA40DN-T1-GE3 is dependent on the operating conditions, such as ambient temperature and airflow. Refer to the datasheet for specific power dissipation ratings and thermal resistance values to ensure safe operation.
  • SISA40DN-T1-GE3 is rated for operation up to 150°C (302°F). However, it's essential to consider the component's power dissipation, thermal resistance, and derating factors when operating in high-temperature environments to prevent overheating and ensure reliable operation.

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