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SISA72ADN-T1-GE3 - Vishay

Description: MOSFET 40V Vds; 20/-16V Vgs PowerPAK 1212-8

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SISA72ADN-T1-GE3 - Vishay PCB footprint - Other - Other - SISA72ADN-T1-GE3-2
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SISA72ADN-T1-GE3 - Vishay  - 3D model - Other - SISA72ADN-T1-GE3-2
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SISA72ADN-T1-GE3 Details

  • Manufacturer Part Number:

    SISA72ADN-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    24 Weeks

  • Date Of Intro:

    2018-08-19

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5.6

  • Avalanche Energy Rating (Eas):

    11.25 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    92 A

  • Drain-source On Resistance-Max:

    0.00466 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    19 pF

  • JESD-30 Code:

    S-PDSO-F5

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    52 W

  • Pulsed Drain Current-Max (IDM):

    150 A

  • Surface Mount:

    YES

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    80 ns

  • Turn-on Time-Max (ton):

    44 ns

SISA72ADN-T1-GE3 Frequently Asked Questions (FAQs)

  • Vishay provides a recommended PCB layout and land pattern in their application note AN10343, which can be found on their website. Following this layout ensures optimal thermal performance and minimizes parasitic inductance.
  • Vishay recommends following the soldering guidelines outlined in their application note AN10226, which includes information on soldering temperature, time, and techniques to avoid common defects such as cold solder joints and solder bridging.
  • According to Vishay's application note AN10444, the maximum allowed voltage derating for the SISA72ADN-T1-GE3 is 80% of the rated voltage. Exceeding this derating may compromise the device's reliability and lifespan.
  • Vishay provides a thermal model and calculation guidelines in their application note AN10343. Engineers can use this information to calculate the power dissipation and junction temperature of the device based on their specific application and operating conditions.
  • Yes, Vishay recommends following standard ESD protection measures, such as using an ESD wrist strap, mat, or workstation, and handling the device by the body rather than the leads. This helps prevent damage from electrostatic discharge.

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SISA72ADN-T1-GE3 Overview

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