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SISB46DN-T1-GE3 - Vishay

Description: Dual N-Channel 40 V (D-S) MOSFET

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SISB46DN-T1-GE3 - Vishay PCB footprint - Other - Other - PowerPAK-1212-8 Dual
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SISB46DN-T1-GE3 - Vishay  - 3D model - Other - PowerPAK-1212-8 Dual
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SISB46DN-T1-GE3 Details

  • Manufacturer Part Number:

    SISB46DN-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Country Of Origin:

    Germany

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    29 Weeks

  • Date Of Intro:

    2016-09-25

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    3

  • Avalanche Energy Rating (Eas):

    6 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    34 A

  • Drain-source On Resistance-Max:

    0.0158 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    20 pF

  • JESD-30 Code:

    S-PDSO-N8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    23 W

  • Pulsed Drain Current-Max (IDM):

    70 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    80 ns

  • Turn-on Time-Max (ton):

    140 ns

SISB46DN-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SISB46DN-T1-GE3 is a standard SOT23-6 package with a 1.5mm x 2.5mm body size. The datasheet provides a recommended land pattern and soldering guidelines.
  • To ensure reliability in high-temperature applications, follow the recommended operating temperature range of -55°C to 150°C, and ensure proper thermal management, such as using a heat sink or thermal interface material, to keep the junction temperature below 150°C.
  • The maximum allowed voltage on the input pins of the SISB46DN-T1-GE3 is 5.5V, which is the absolute maximum rating. Operating the device above this voltage can cause permanent damage.
  • Yes, the SISB46DN-T1-GE3 is suitable for high-frequency switching applications up to 100 kHz. However, ensure that the device is properly bypassed and decoupled to minimize electromagnetic interference (EMI) and radio-frequency interference (RFI).
  • Handle the SISB46DN-T1-GE3 with care during storage and shipping to prevent mechanical damage. Store the devices in their original packaging, away from direct sunlight, moisture, and extreme temperatures. Avoid bending, flexing, or applying excessive force to the leads.

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