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SISF06DN-T1-GE3 - Vishay

Description: 1-MOSFET Dual N-Ch 30V(S1-S2)

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SISF06DN-T1-GE3 - Vishay PCB footprint - Other - Other - SISF06DN-T1-GE3-3
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SISF06DN-T1-GE3 - Vishay  - 3D model - Other - SISF06DN-T1-GE3-3
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SISF06DN-T1-GE3 Details

  • Manufacturer Part Number:

    SISF06DN-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Date Of Intro:

    2020-01-13

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5.3

  • Case Connection:

    SOURCE

  • Configuration:

    COMMON DRAIN, 2 ELEMENTS

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    101 A

  • Drain-source On Resistance-Max:

    0.0045 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    40 pF

  • JESD-30 Code:

    S-PDSO-N6

  • Number of Elements:

    2

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    69.4 W

  • Pulsed Drain Current-Max (IDM):

    190 A

  • Surface Mount:

    YES

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    40

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    90 ns

  • Turn-on Time-Max (ton):

    56 ns

SISF06DN-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SISF06DN-T1-GE3 is a standard SOT23-6 package with a 1.8mm x 1.4mm body size. The recommended land pattern is available in the Vishay Intertechnologies' application note or can be found in the IPC-7351 standard.
  • To ensure reliability in high-temperature applications, follow the recommended derating guidelines for the device, ensure proper thermal management, and consider using a thermally conductive pad or heat sink. Additionally, perform thorough testing and validation to ensure the device meets the required specifications.
  • The maximum allowed voltage on the enable pin (EN) of the SISF06DN-T1-GE3 is 6V. Exceeding this voltage may damage the device or affect its performance.
  • Yes, the SISF06DN-T1-GE3 can be used in switching regulator applications. However, ensure that the device is properly biased, and the switching frequency is within the recommended range. Additionally, consider the device's power dissipation and thermal management requirements.
  • The typical turn-on and turn-off time for the SISF06DN-T1-GE3 is around 10-20ns. However, this may vary depending on the specific application, PCB layout, and operating conditions.

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SISF06DN-T1-GE3 Overview

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