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SISF54DN-T1-GE3 - Vishay

Description: Common Drain Dual N-Channel 30 V (S1-S2) MOSFET

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SISF54DN-T1-GE3 - Vishay PCB footprint - Other - Other - PowerPAK® 1212-8S CD with Flip Chip
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SISF54DN-T1-GE3 Details

  • Manufacturer Part Number:

    SISF54DN-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5

  • Case Connection:

    SOURCE

  • Configuration:

    COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    118 A

  • Drain-source On Resistance-Max:

    0.0031 Ω

  • FET Technology:

    TRENCH MOSFET

  • Feedback Cap-Max (Crss):

    35 pF

  • JESD-30 Code:

    S-PDSO-N8

  • Number of Elements:

    2

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    69.4 W

  • Pulsed Drain Current-Max (IDM):

    250 A

  • Surface Mount:

    YES

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    65 ns

  • Turn-on Time-Max (ton):

    200 ns

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SISF54DN-T1-GE3 Overview

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