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SISH129DN-T1-GE3 - Vishay

Description: P-Channel 30 V 14.4A (Ta), 35A (Tc) 3.8W (Ta), 52.1W (Tc) Surface Mount PowerPAK® 1212-8SH, MOSFET P-CH 30V 14.4A/35A PPAK

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SISH129DN-T1-GE3 - Vishay PCB footprint - Other - Other - PowerPAK 1212-8SH_1
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SISH129DN-T1-GE3 - Vishay  - 3D model - Other - PowerPAK 1212-8SH_1
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SISH129DN-T1-GE3 Details

  • Manufacturer Part Number:

    SISH129DN-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5.4

  • Avalanche Energy Rating (Eas):

    31.25 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    35 A

  • Drain-source On Resistance-Max:

    0.0114 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    322 pF

  • JESD-30 Code:

    S-PDSO-N5

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -50 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    52.1 W

  • Pulsed Drain Current-Max (IDM):

    60 A

  • Surface Mount:

    YES

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    74 ns

  • Turn-on Time-Max (ton):

    39 ns

SISH129DN-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SISH129DN-T1-GE3 is a standard TO-252 (D-PAK) footprint with a minimum pad size of 2.5 mm x 2.5 mm and a thermal pad size of 4.5 mm x 4.5 mm.
  • To ensure reliable soldering, use a soldering iron with a temperature range of 250°C to 260°C, and apply a solder flux to the pins. Avoid applying excessive force or pressure to the component during soldering.
  • The maximum allowed voltage on the gate-source pin (Vgs) of the SISH129DN-T1-GE3 is ±20 V. Exceeding this voltage may damage the component.
  • Yes, the SISH129DN-T1-GE3 is suitable for high-frequency switching applications up to 100 kHz. However, ensure that the PCB layout and component selection are optimized for high-frequency operation to minimize losses and ringing.
  • To calculate the power dissipation, use the formula: Pd = (Vds x Ids) + (Vgs x Igs). Where Vds is the drain-source voltage, Ids is the drain-source current, Vgs is the gate-source voltage, and Igs is the gate-source current. Ensure that the calculated power dissipation does not exceed the maximum rated power dissipation of the component.

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SISH129DN-T1-GE3 Overview

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