Part Image

SISH407DN-T1-GE3 - Vishay

Description: MOSFET -20V Vds; +/-8V Vgs PowerPAK 1212-8SH

Download SISH407DN-T1-GE3 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
3D Models
SISH407DN-T1-GE3 - Vishay  - 3D model
click to zoom
Note! To download footprints and symbols, use the build and request forms below

Build

Launch Build Wizard
Build Wizard not available for this package category!

Request (48 hours)

SISH407DN-T1-GE3 Details

  • Manufacturer Part Number:

    SISH407DN-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    19 Weeks

  • Date Of Intro:

    2018-11-27

  • Manufacturer:

    Vishay Intertechnologies

  • Avalanche Energy Rating (Eas):

    20 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    25 A

  • Drain-source On Resistance-Max:

    0.0095 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    370 pF

  • JESD-30 Code:

    S-PDSO-N8

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    33 W

  • Pulsed Drain Current-Max (IDM):

    40 A

  • Surface Mount:

    YES

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    195 ns

  • Turn-on Time-Max (ton):

    77 ns

SISH407DN-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SISH407DN-T1-GE3 can be found in the Vishay Intertechnologies' application note AN10343, which provides a detailed layout and land pattern recommendation for optimal performance and reliability.
  • To ensure proper soldering, follow the recommended soldering profile and guidelines outlined in the Vishay Intertechnologies' application note AN10343. Additionally, use a solder with a melting point below 260°C to prevent damage to the device.
  • The SISH407DN-T1-GE3 is rated for operation from -55°C to 175°C (TJ), but it's essential to consider the derating curves and thermal management guidelines provided in the datasheet to ensure reliable operation within the specified temperature range.
  • The SISH407DN-T1-GE3 is a commercial-grade device, but Vishay Intertechnologies offers a range of high-reliability and aerospace-grade devices. For high-reliability or aerospace applications, consider using devices with the 'HR' or 'AQ' suffix, which meet the relevant industry standards and requirements.
  • Handle the SISH407DN-T1-GE3 with care to prevent mechanical damage and electrostatic discharge (ESD). Store the devices in their original packaging or in a dry, ESD-protected environment to maintain their electrical characteristics and prevent degradation.

Trust Checks

No trust score is available for this model.
Trust Score Unavailable
Sponsored

SISH407DN-T1-GE3 Overview

Use the download button to access the SISH407DN-T1-GE3 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
To find more CAD model downloads similar to this part, try a partial part number search, like SISH4, or try a keyword search, such as Power Field-Effect Transistors

Parts related to SISH407DN-T1-GE3

Showing 0 results

Select Package Category

Package Categories

Datasheet PDF Preview