SISH892BDN-T1-GE3 footprint, schematic symbol and 3D model by Vishay

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PCB Footprints

SISH892BDN-T1-GE3 - Vishay PCB footprint - Other - Other - PowerPAK® 1212-8SH

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3D Models

SISH892BDN-T1-GE3 - Vishay - 3D model - Other - PowerPAK® 1212-8SH

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Datasheet Download Datasheet
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Part Number SISH892BDN-T1-GE3
Manufacturer Vishay
Pin Count 11
Part Category MOSFET (N-Channel)
Package Category Other
Footprint Name Other - PowerPAK® 1212-8SH
Released Date Jun 28, 2022
Last Modified Date Nov 21, 2024 12:36 PM UTC
Pinout / Pin List Click Here (Member Only)

SISH892BDN-T1-GE3 Details

Manufacturer Part Number:
SISH892BDN-T1-GE3
Rohs Code:
Yes
Part Life Cycle Code:
Active
ECCN Code:
EAR99
Factory Lead Time:
24 Weeks
Manufacturer:
Vishay Intertechnologies
YTEOL:
6
Avalanche Energy Rating (Eas):
11.25 mJ
Case Connection:
DRAIN
Configuration:
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min:
100 V
Drain Current-Max (ID):
20 A
Drain-source On Resistance-Max:
0.0347 Ω
FET Technology:
METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss):
4 pF
JESD-30 Code:
S-PDSO-N8
Moisture Sensitivity Level:
1
Number of Elements:
1
Number of Terminals:
8
Operating Mode:
ENHANCEMENT MODE
Operating Temperature-Max:
150 °C
Operating Temperature-Min:
-55 °C
Package Body Material:
PLASTIC/EPOXY
Package Shape:
SQUARE
Package Style:
SMALL OUTLINE
Peak Reflow Temperature (Cel):
260
Polarity/Channel Type:
N-CHANNEL
Power Dissipation-Max (Abs):
29 W
Pulsed Drain Current-Max (IDM):
40 A
Surface Mount:
YES
Terminal Finish:
Pure Matte Tin (Sn) - annealed
Terminal Form:
NO LEAD
Terminal Position:
DUAL
Time@Peak Reflow Temperature-Max (s):
30
Transistor Application:
SWITCHING
Transistor Element Material:
SILICON
Turn-off Time-Max (toff):
44 ns
Turn-on Time-Max (ton):
62 ns

SISH892BDN-T1-GE3 Frequently Asked Questions (FAQs)

The recommended PCB footprint for the SISH892BDN-T1-GE3 is a standard SOT-223 package with a minimum pad size of 2.5 mm x 2.5 mm and a thermal pad size of 3.5 mm x 3.5 mm.
To ensure reliability in high-temperature applications, it's essential to follow proper thermal management practices, such as providing adequate heat sinking, using a thermally conductive interface material, and keeping the device within its specified operating temperature range.
The maximum allowed voltage derating for the SISH892BDN-T1-GE3 is 80% of the maximum rated voltage, which is 100 V for this device. This means the maximum allowed voltage derating is 80 V.
Yes, the SISH892BDN-T1-GE3 can be used in a switching regulator application, but it's essential to ensure that the device is operated within its specified switching frequency range and that the circuit is designed to minimize voltage spikes and ringing.
The SISH892BDN-T1-GE3 has a built-in thermal shutdown feature that activates when the junction temperature exceeds 150°C. To handle this feature, ensure that your design includes adequate thermal management and monitoring to prevent overheating, and implement a suitable fault detection and recovery mechanism.

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SISH892BDN-T1-GE3 Overview

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SISH892BDN-T1-GE3 - Vishay

SISH892BDN-T1-GE3 Details

SISH892BDN-T1-GE3 Frequently Asked Questions (FAQs)

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