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SISHA14DN-T1-GE3 - Vishay

Description: MOSFETs 30V N-CHANNEL (D-S) FAST SWITC

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SISHA14DN-T1-GE3 - Vishay PCB footprint - Other - Other - PowerPAK® -1212-8 Single
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SISHA14DN-T1-GE3 - Vishay  - 3D model - Other - PowerPAK® -1212-8 Single
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SISHA14DN-T1-GE3 Details

  • Manufacturer Part Number:

    SISHA14DN-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Date Of Intro:

    2018-11-27

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    11.25 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    19.7 A

  • Drain-source On Resistance-Max:

    0.0051 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    38 pF

  • JESD-30 Code:

    S-PDSO-N8

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    26.5 W

  • Pulsed Drain Current-Max (IDM):

    80 A

  • Surface Mount:

    YES

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-on Time-Max (ton):

    54 ns

SISHA14DN-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SISHA14DN-T1-GE3 is a rectangular pad with a size of 2.5 mm x 1.5 mm, with a 0.5 mm radius corner and a 0.3 mm spacing between pads.
  • Yes, the SISHA14DN-T1-GE3 is rated for operation up to 150°C, making it suitable for high-temperature applications. However, it's essential to ensure that the device is properly derated and that the application meets the specified thermal requirements.
  • The typical lead time for the SISHA14DN-T1-GE3 varies depending on the supplier and the quantity required. However, it's usually around 8-12 weeks. It's recommended to check with authorized distributors or Vishay Intertechnologies directly for the most up-to-date lead time information.
  • Yes, the SISHA14DN-T1-GE3 is RoHS (Restriction of Hazardous Substances) and REACH (Registration, Evaluation, Authorization, and Restriction of Chemicals) compliant, meeting the European Union's regulations for environmental sustainability.
  • The recommended storage condition for the SISHA14DN-T1-GE3 is in a dry, cool place with a temperature range of 5°C to 30°C and a relative humidity of 60% or less. It's essential to follow proper storage and handling procedures to prevent damage and ensure the device's reliability.

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