SISS10ADN-T1-GE3 footprint, schematic symbol and 3D model by Vishay

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PCB Footprints

SISS10ADN-T1-GE3 - Vishay PCB footprint - Other - Other - PowerPAK® 1212-8 Single_2

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3D Models

SISS10ADN-T1-GE3 - Vishay - 3D model - Other - PowerPAK® 1212-8 Single_2

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Datasheet Download Datasheet
Stock & Prices Price & Stock for SISS10ADN-T1-GE3
Part Number SISS10ADN-T1-GE3
Manufacturer Vishay
Pin Count 11
Part Category MOSFET (N-Channel)
Package Category Other
Footprint Name Other - PowerPAK® 1212-8 Single_2
Released Date Apr 12, 2021
Last Modified Date Mar 7, 2023 4:10 PM UTC
Pinout / Pin List Click Here (Member Only)

SISS10ADN-T1-GE3 Details

Manufacturer Part Number:
SISS10ADN-T1-GE3
Rohs Code:
Yes
Part Life Cycle Code:
Active
ECCN Code:
EAR99
Factory Lead Time:
12 Weeks
Date Of Intro:
2018-10-02
Manufacturer:
Vishay Intertechnologies
YTEOL:
5.6
Avalanche Energy Rating (Eas):
45 mJ
Case Connection:
DRAIN
Configuration:
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min:
40 V
Drain Current-Max (ID):
109 A
Drain-source On Resistance-Max:
0.00265 Ω
FET Technology:
METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss):
52 pF
JESD-30 Code:
S-PDSO-N5
Number of Elements:
1
Number of Terminals:
5
Operating Mode:
ENHANCEMENT MODE
Operating Temperature-Max:
150 °C
Operating Temperature-Min:
-55 °C
Package Body Material:
PLASTIC/EPOXY
Package Shape:
SQUARE
Package Style:
SMALL OUTLINE
Peak Reflow Temperature (Cel):
NOT SPECIFIED
Polarity/Channel Type:
N-CHANNEL
Power Dissipation-Max (Abs):
56.8 W
Pulsed Drain Current-Max (IDM):
150 A
Surface Mount:
YES
Terminal Form:
NO LEAD
Terminal Position:
DUAL
Time@Peak Reflow Temperature-Max (s):
NOT SPECIFIED
Transistor Application:
SWITCHING
Transistor Element Material:
SILICON
Turn-off Time-Max (toff):
70 ns
Turn-on Time-Max (ton):
36 ns

SISS10ADN-T1-GE3 Frequently Asked Questions (FAQs)

The recommended PCB footprint for the SISS10ADN-T1-GE3 is a pad size of 1.3 mm x 0.8 mm with a 0.5 mm spacing between pads. It's essential to follow the recommended footprint to ensure proper thermal performance and to prevent overheating.
To ensure reliability in high-temperature applications, it's crucial to follow the recommended derating curves and thermal management guidelines provided in the datasheet. Additionally, consider using a heat sink or thermal interface material to improve heat dissipation.
The maximum allowed voltage for the SISS10ADN-T1-GE3 is 100 V. Exceeding this voltage may result in device damage or failure. It's essential to ensure that the operating voltage is within the recommended range to ensure device reliability.
The SISS10ADN-T1-GE3 is designed for low-frequency applications. While it can be used in high-frequency applications, its performance may degrade due to increased power losses. It's recommended to consult with a Vishay Intertechnologies application engineer to determine the suitability of the device for high-frequency applications.
The typical lead time for the SISS10ADN-T1-GE3 varies depending on the region, quantity, and availability. It's recommended to check with authorized distributors or Vishay Intertechnologies' customer service for the most up-to-date lead time information.

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SISS10ADN-T1-GE3 - Vishay

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SISS10ADN-T1-GE3 Frequently Asked Questions (FAQs)

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