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SISS26DN-T1-GE3 - Vishay

Description: MOSFET 60V Vds 20V Vgs PowerPAK 1212-8S

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SISS26DN-T1-GE3 - Vishay - PCB symbol
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SISS26DN-T1-GE3 - Vishay PCB footprint - Other - Other - SISS26DN-T1-GE3-1
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SISS26DN-T1-GE3 - Vishay - 3D model - Other - SISS26DN-T1-GE3-1
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SISS26DN-T1-GE3 Details

  • Manufacturer Part Number:

    SISS26DN-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    24 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5.6

  • Avalanche Energy Rating (Eas):

    31.2 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    60 A

  • Drain-source On Resistance-Max:

    0.0045 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    29 pF

  • JESD-30 Code:

    S-PDSO-N8

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    57 W

  • Pulsed Drain Current-Max (IDM):

    150 A

  • Surface Mount:

    YES

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    44 ns

  • Turn-on Time-Max (ton):

    68 ns

SISS26DN-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for SISS26DN-T1-GE3 is a standard SOT23-6 package with a 1.8mm x 1.35mm body size. A minimum pad size of 1.2mm x 0.8mm is recommended for reliable soldering.
  • To ensure reliable operation in high-temperature environments, ensure that the device is operated within its specified temperature range (-40°C to 150°C). Additionally, provide adequate heat sinking and thermal management to prevent overheating.
  • The maximum allowed voltage on the input pins of SISS26DN-T1-GE3 is 5.5V. Exceeding this voltage may cause damage to the device.
  • Yes, SISS26DN-T1-GE3 is suitable for high-frequency applications up to 1 GHz. However, ensure that the device is properly decoupled and that the PCB layout is optimized for high-frequency operation.
  • To prevent ESD damage, handle SISS26DN-T1-GE3 devices with ESD-protective equipment and follow proper ESD handling procedures. The device has an integrated ESD protection diode, but additional external protection may be necessary depending on the application.

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SISS26DN-T1-GE3 Overview

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