SISS26LDN-T1-GE3 footprint, schematic symbol and 3D model by Vishay

Symbol

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PCB Footprints

SISS26LDN-T1-GE3 - Vishay PCB footprint - Other - Other - SISS26LDN-T1-GE3-2

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3D Models

SISS26LDN-T1-GE3 - Vishay - 3D model - Other - SISS26LDN-T1-GE3-2

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Datasheet Download Datasheet
Stock & Prices Price & Stock for SISS26LDN-T1-GE3
Part Number SISS26LDN-T1-GE3
Manufacturer Vishay
Pin Count 11
Part Category MOSFET (N-Channel)
Package Category Other
Footprint Name Other - SISS26LDN-T1-GE3-2
Released Date Nov 12, 2021
Last Modified Date Mar 7, 2023 4:10 PM UTC
Pinout / Pin List Click Here (Member Only)

SISS26LDN-T1-GE3 Details

Manufacturer Part Number:
SISS26LDN-T1-GE3
Rohs Code:
Yes
Part Life Cycle Code:
Active
ECCN Code:
EAR99
Factory Lead Time:
16 Weeks
Date Of Intro:
2019-01-09
Manufacturer:
Vishay Intertechnologies
YTEOL:
5.6
Avalanche Energy Rating (Eas):
31.2 mJ
Case Connection:
DRAIN
Configuration:
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min:
60 V
Drain Current-Max (ID):
81.2 A
Drain-source On Resistance-Max:
0.0043 Ω
FET Technology:
METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss):
24 pF
JESD-30 Code:
S-PDSO-F8
Number of Elements:
1
Number of Terminals:
8
Operating Mode:
ENHANCEMENT MODE
Operating Temperature-Max:
150 °C
Operating Temperature-Min:
-55 °C
Package Body Material:
PLASTIC/EPOXY
Package Shape:
SQUARE
Package Style:
SMALL OUTLINE
Peak Reflow Temperature (Cel):
NOT SPECIFIED
Polarity/Channel Type:
N-CHANNEL
Power Dissipation-Max (Abs):
57 W
Pulsed Drain Current-Max (IDM):
150 A
Surface Mount:
YES
Terminal Form:
FLAT
Terminal Position:
DUAL
Time@Peak Reflow Temperature-Max (s):
NOT SPECIFIED
Transistor Application:
SWITCHING
Transistor Element Material:
SILICON
Turn-off Time-Max (toff):
68 ns
Turn-on Time-Max (ton):
188 ns

SISS26LDN-T1-GE3 Frequently Asked Questions (FAQs)

The recommended PCB footprint for SISS26LDN-T1-GE3 is a rectangular pad with a size of 1.3 mm x 0.8 mm, with a 0.5 mm radius corner. The pad should be centered on the component and have a solder mask defined (SMD) pad.
To ensure proper thermal management, it is recommended to provide a thermal pad on the PCB, and to use a thermal interface material (TIM) between the component and the heat sink. The thermal pad should be connected to a copper plane or a heat sink to dissipate heat efficiently.
The maximum operating temperature range for SISS26LDN-T1-GE3 is -40°C to 150°C. However, it's recommended to operate the device within a temperature range of -20°C to 125°C for optimal performance and reliability.
Yes, SISS26LDN-T1-GE3 is suitable for high-reliability applications. It is built with a robust design and undergoes rigorous testing to ensure its performance and reliability in demanding environments.
To ensure the reliability of SISS26LDN-T1-GE3 in a humid environment, it is recommended to apply a conformal coating to the PCB and component. Additionally, the device should be stored in a dry environment, and the PCB should be designed with moisture-resistant materials.

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SISS26LDN-T1-GE3 Overview

Use the download button to access the SISS26LDN-T1-GE3 schematic symbol, PCB footprint, and 3D model.

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SISS26LDN-T1-GE3 - Vishay

SISS26LDN-T1-GE3 Details

SISS26LDN-T1-GE3 Frequently Asked Questions (FAQs)

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