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SISS27DN-T1-GE3 - Vishay

Description: Vishay SISS27DN-T1-GE3 P-channel MOSFET Transistor, 23 A, -30 V, 8-Pin PowerPAK 1212

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SISS27DN-T1-GE3 - Vishay - PCB symbol
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PCB Footprints
SISS27DN-T1-GE3 - Vishay PCB footprint - Other - Other - PowerPAK® 1212-8 Single_2-1
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3D Models
SISS27DN-T1-GE3 - Vishay - 3D model - Other - PowerPAK® 1212-8 Single_2-1
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SISS27DN-T1-GE3 Details

  • Manufacturer Part Number:

    SISS27DN-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    3

  • Avalanche Energy Rating (Eas):

    31 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    50 A

  • Drain-source On Resistance-Max:

    0.0056 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    485 pF

  • JESD-30 Code:

    S-PDSO-N8

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -50 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    57 W

  • Pulsed Drain Current-Max (IDM):

    200 A

  • Surface Mount:

    YES

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    140 ns

  • Turn-on Time-Max (ton):

    210 ns

SISS27DN-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for SISS27DN-T1-GE3 is a 5-pin SOT23 package with a minimum pad size of 1.3 mm x 1.3 mm and a thermal pad size of 2.5 mm x 2.5 mm.
  • To ensure reliability in high-temperature applications, ensure the device operates within the recommended junction temperature range (TJ) of -40°C to 150°C, and follow proper thermal management and PCB design guidelines.
  • The maximum allowed voltage on the input pins of SISS27DN-T1-GE3 is 5.5V, exceeding which may cause permanent damage to the device.
  • Yes, SISS27DN-T1-GE3 is suitable for high-frequency switching applications up to 100 kHz, but ensure proper PCB layout, decoupling, and filtering to minimize electromagnetic interference (EMI).
  • Handle SISS27DN-T1-GE3 with ESD-protective equipment, such as wrist straps, mats, and bags, to prevent electrostatic discharge damage. Follow proper handling and storage procedures to minimize ESD risks.

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SISS27DN-T1-GE3 Overview

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