SISS32DN-T1-GE3 footprint, schematic symbol and 3D model by Vishay

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PCB Footprints

SISS32DN-T1-GE3 - Vishay PCB footprint - Other - Other - PowerPAK 1212-8S

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3D Models

SISS32DN-T1-GE3 - Vishay - 3D model - Other - PowerPAK 1212-8S

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Datasheet Download Datasheet
Stock & Prices Price & Stock for SISS32DN-T1-GE3
Part Number SISS32DN-T1-GE3
Manufacturer Vishay
Pin Count 11
Part Category MOSFET (N-Channel)
Package Category Other
Footprint Name Other - PowerPAK 1212-8S
Released Date Jun 28, 2022
Last Modified Date Mar 7, 2023 4:10 PM UTC
Pinout / Pin List Click Here (Member Only)

SISS32DN-T1-GE3 Details

Manufacturer Part Number:
SISS32DN-T1-GE3
Rohs Code:
Yes
Part Life Cycle Code:
Active
ECCN Code:
EAR99
Factory Lead Time:
24 Weeks
Date Of Intro:
2018-08-19
Manufacturer:
Vishay Intertechnologies
YTEOL:
5.9
Avalanche Energy Rating (Eas):
20 mJ
Case Connection:
DRAIN
Configuration:
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min:
80 V
Drain Current-Max (ID):
63 A
Drain-source On Resistance-Max:
0.0087 Ω
FET Technology:
METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss):
4 pF
JESD-30 Code:
S-PDSO-N8
Number of Elements:
1
Number of Terminals:
8
Operating Mode:
ENHANCEMENT MODE
Operating Temperature-Max:
150 °C
Operating Temperature-Min:
-55 °C
Package Body Material:
PLASTIC/EPOXY
Package Shape:
SQUARE
Package Style:
SMALL OUTLINE
Peak Reflow Temperature (Cel):
NOT SPECIFIED
Polarity/Channel Type:
N-CHANNEL
Power Dissipation-Max (Abs):
65.7 W
Pulsed Drain Current-Max (IDM):
150 A
Surface Mount:
YES
Terminal Form:
NO LEAD
Terminal Position:
DUAL
Time@Peak Reflow Temperature-Max (s):
NOT SPECIFIED
Transistor Application:
SWITCHING
Transistor Element Material:
SILICON
Turn-off Time-Max (toff):
50 ns
Turn-on Time-Max (ton):
42 ns

SISS32DN-T1-GE3 Frequently Asked Questions (FAQs)

The recommended PCB footprint for SISS32DN-T1-GE3 is a rectangle with dimensions of 1.6 mm x 0.8 mm, with a 0.5 mm radius corner. The pad spacing should be 0.5 mm, and the pad size should be 0.8 mm x 0.8 mm.
To ensure reliable soldering, use a soldering iron with a temperature of 250°C to 260°C, and apply a small amount of solder paste to the PCB pads. Use a soldering technique that minimizes the risk of overheating the component.
The maximum operating temperature range for SISS32DN-T1-GE3 is -55°C to 150°C. However, it's recommended to operate the device within the specified temperature range to ensure optimal performance and reliability.
Yes, SISS32DN-T1-GE3 is designed to operate in humid environments. However, it's recommended to follow proper PCB design and assembly guidelines to minimize the risk of moisture-related issues.
To handle ESD protection for SISS32DN-T1-GE3, use proper ESD handling procedures during assembly and storage. Use ESD-protective packaging, and ensure that the device is handled in an ESD-controlled environment.

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SISS32DN-T1-GE3 Overview

Use the download button to access the SISS32DN-T1-GE3 schematic symbol, PCB footprint, and 3D model.

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SISS32DN-T1-GE3 - Vishay

SISS32DN-T1-GE3 Details

SISS32DN-T1-GE3 Frequently Asked Questions (FAQs)

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