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- Stock & Prices $ Price & Stock for SISS54DN-T1-GE3
- Part Number SISS54DN-T1-GE3
- Manufacturer Vishay
- Pin Count 11
- Part Category MOSFET (N-Channel)
- Package Category Other
- Footprint Name Other - PowerPAK 1212-8 Single
- Released Date Apr 17, 2023
- Last Modified Date Apr 17, 2023 9:55 AM UTC
- Pinout / Pin List Click Here (Member Only)
SISS54DN-T1-GE3 Details
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Manufacturer Part Number:
SISS54DN-T1-GE3
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Rohs Code:
Yes
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Part Life Cycle Code:
Active
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ECCN Code:
EAR99
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Manufacturer:
Vishay Intertechnologies
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YTEOL:
5
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Avalanche Energy Rating (Eas):
61.25 mJ
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Case Connection:
DRAIN
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Configuration:
SINGLE WITH BUILT-IN DIODE
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DS Breakdown Voltage-Min:
30 V
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Drain Current-Max (ID):
185.6 A
SISS54DN-T1-GE3 Frequently Asked Questions (FAQs)
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The recommended PCB footprint for the SISS54DN-T1-GE3 is a standard SOT23-6 package with a 1.3mm x 1.3mm body size. A minimum pad size of 0.8mm x 0.8mm is recommended for reliable soldering.
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To ensure reliable operation in high-temperature environments, it is recommended to derate the maximum junction temperature (Tj) by 1°C for every 1W of power dissipation above 25°C. Additionally, ensure good thermal conductivity between the device and the PCB, and consider using a heat sink if necessary.
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The maximum allowed voltage on the input pins of the SISS54DN-T1-GE3 is 5.5V. Exceeding this voltage may cause damage to the device or affect its reliability.
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Yes, the SISS54DN-T1-GE3 can be used in switching regulator applications. However, ensure that the device is properly bypassed and decoupled to minimize noise and voltage spikes. Additionally, consider the device's power dissipation and thermal characteristics when designing the switching regulator circuit.
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To prevent electrostatic discharge (ESD) damage, handle the SISS54DN-T1-GE3 with an ESD wrist strap or mat, and ensure that the workspace is ESD-protected. Avoid touching the device's pins or exposing it to static electricity.
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SISS54DN-T1-GE3 Overview
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