The recommended PCB footprint for the SISS60DN-T1-GE3 is a 5-pin TO-252 (D-PAK) package with a minimum pad size of 2.5mm x 2.5mm and a maximum pad size of 3.5mm x 3.5mm, with a 1.5mm x 1.5mm thermal pad in the center.
To ensure proper thermal management, it is recommended to use a thermal interface material (TIM) with a thermal conductivity of at least 1 W/m-K between the device and the heat sink. Additionally, a heat sink with a minimum size of 10mm x 10mm x 1.5mm is recommended, with a thermal interface material applied to the heat sink as well.
The maximum allowed voltage on the gate pin of the SISS60DN-T1-GE3 is ±20V, with a recommended maximum voltage of ±15V to ensure reliable operation.
Yes, the SISS60DN-T1-GE3 is suitable for high-frequency switching applications up to 100 kHz, but it's essential to consider the device's switching losses, gate drive requirements, and thermal management to ensure reliable operation.
Yes, the SISS60DN-T1-GE3 is compatible with lead-free soldering processes, with a peak reflow temperature of 260°C (500°F) for a maximum of 20 seconds.
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SISS60DN-T1-GE3 Overview
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