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SISS61DN-T1-GE3 - Vishay

Description: P-Channel 20 V 30.9A (Ta), 111.9A (Tc) 5W (Ta), 65.8W (Tc) Surface Mount PowerPAK® 1212-8S

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SISS61DN-T1-GE3 Details

  • Manufacturer Part Number:

    SISS61DN-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Date Of Intro:

    2018-11-27

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5.3

  • Avalanche Energy Rating (Eas):

    31.2 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    111.9 A

  • Drain-source On Resistance-Max:

    0.0035 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    860 pF

  • JESD-30 Code:

    S-PDSO-N8

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    65.8 W

  • Pulsed Drain Current-Max (IDM):

    200 A

  • Surface Mount:

    YES

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    294 ns

  • Turn-on Time-Max (ton):

    164 ns

SISS61DN-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for SISS61DN-T1-GE3 is a standard SOT23-6L package with a 1.8mm x 1.35mm body size. A minimum pad size of 1.2mm x 0.8mm is recommended for reliable soldering.
  • To ensure reliable operation of SISS61DN-T1-GE3 in high-temperature environments, it is recommended to follow proper thermal management practices, such as providing adequate heat sinking, using thermal interface materials, and ensuring good airflow around the device.
  • The maximum allowed voltage on the enable pin (EN) of SISS61DN-T1-GE3 is 6V. Exceeding this voltage may cause damage to the device.
  • Yes, SISS61DN-T1-GE3 is suitable for high-frequency switching applications up to 1MHz. However, it is essential to follow proper PCB layout and design guidelines to minimize parasitic inductance and ensure reliable operation.
  • To prevent ESD damage, it is recommended to handle SISS61DN-T1-GE3 in an ESD-protected environment, use ESD-protective packaging, and follow proper handling and storage procedures.

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SISS61DN-T1-GE3 Overview

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