SISS64DN-T1-GE3 footprint, schematic symbol and 3D model by Vishay

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PCB Footprints

SISS64DN-T1-GE3 - Vishay PCB footprint - Other - Other - PowerPAK 1212-8 Single

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3D Models

SISS64DN-T1-GE3 - Vishay - 3D model - Other - PowerPAK 1212-8 Single

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Datasheet Download Datasheet
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Part Number SISS64DN-T1-GE3
Manufacturer Vishay
Pin Count 11
Part Category MOSFET (N-Channel)
Package Category Other
Footprint Name Other - PowerPAK 1212-8 Single
Released Date Sep 9, 2023
Last Modified Date Sep 10, 2023 6:25 AM UTC
Pinout / Pin List Click Here (Member Only)

SISS64DN-T1-GE3 Details

Manufacturer Part Number:
SISS64DN-T1-GE3
Rohs Code:
Yes
Part Life Cycle Code:
Active
Country Of Origin:
Mainland China
ECCN Code:
EAR99
Factory Lead Time:
16 Weeks
Manufacturer:
Vishay Intertechnologies
YTEOL:
5
Avalanche Energy Rating (Eas):
45 mJ
Case Connection:
DRAIN
Configuration:
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min:
30 V
Drain Current-Max (ID):
40 A
Drain-source On Resistance-Max:
0.00286 Ω
FET Technology:
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code:
S-PDSO-N5
JESD-609 Code:
e3
Moisture Sensitivity Level:
1
Number of Elements:
1
Number of Terminals:
5
Operating Mode:
ENHANCEMENT MODE
Package Body Material:
PLASTIC/EPOXY
Package Shape:
SQUARE
Package Style:
SMALL OUTLINE
Peak Reflow Temperature (Cel):
260
Polarity/Channel Type:
N-CHANNEL
Pulsed Drain Current-Max (IDM):
100 A
Surface Mount:
YES
Terminal Finish:
Matte Tin (Sn) - annealed
Terminal Form:
NO LEAD
Terminal Position:
DUAL
Time@Peak Reflow Temperature-Max (s):
30
Transistor Application:
SWITCHING
Transistor Element Material:
SILICON

SISS64DN-T1-GE3 Frequently Asked Questions (FAQs)

The recommended PCB footprint for SISS64DN-T1-GE3 is a pad size of 1.3 mm x 0.8 mm with a 0.5 mm spacing between pads. It's essential to follow the recommended footprint to ensure proper thermal performance and to prevent thermal runaway.
To ensure reliability in high-temperature applications, it's crucial to follow the recommended derating curves, ensure proper thermal management, and avoid exceeding the maximum junction temperature (Tj) of 150°C. Additionally, consider using a thermally conductive interface material and a heat sink to dissipate heat efficiently.
The maximum surge current rating for the SISS64DN-T1-GE3 is 100 A for 10 ms. It's essential to ensure that the device is not subjected to surge currents exceeding this rating to prevent damage or failure.
Yes, you can use multiple SISS64DN-T1-GE3 devices in parallel to increase current handling. However, it's essential to ensure that the devices are properly matched, and the PCB layout is designed to minimize current imbalance and thermal mismatch between devices.
The recommended storage temperature range for the SISS64DN-T1-GE3 is -40°C to 125°C. Storing the device outside this range may affect its reliability and performance.

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SISS64DN-T1-GE3 Overview

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SISS64DN-T1-GE3 - Vishay

SISS64DN-T1-GE3 Details

SISS64DN-T1-GE3 Frequently Asked Questions (FAQs)

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