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SISS66DN-T1-GE3 - Vishay

Description: N-Channel 30 V (D-S) MOSFET with Schottky Diode

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SISS66DN-T1-GE3 - Vishay PCB footprint - Other - Other - PowerPAK® -1212-8 Single
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SISS66DN-T1-GE3 Details

  • Manufacturer Part Number:

    SISS66DN-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Date Of Intro:

    2019-02-07

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5.3

  • Avalanche Energy Rating (Eas):

    20 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    178.3 A

  • Drain-source On Resistance-Max:

    0.00138 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    150 pF

  • JESD-30 Code:

    S-PDSO-N8

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    65.8 W

  • Pulsed Drain Current-Max (IDM):

    200 A

  • Surface Mount:

    YES

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    40

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    116 ns

  • Turn-on Time-Max (ton):

    664 ns

SISS66DN-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SISS66DN-T1-GE3 is a standard SOT-223 package with a minimum pad size of 2.5mm x 2.5mm and a thermal pad size of 3.5mm x 3.5mm.
  • To ensure reliability in high-temperature applications, it's essential to follow proper thermal management practices, such as providing adequate heat sinking, using a thermally conductive interface material, and keeping the device within its recommended operating temperature range.
  • Yes, the SISS66DN-T1-GE3 is suitable for high-frequency switching applications up to 1 MHz. However, it's crucial to consider the device's switching characteristics, such as rise and fall times, and ensure that the application's switching frequency is within the device's recommended operating range.
  • The maximum allowed voltage for the SISS66DN-T1-GE3's input pins is 5V, and it's essential to ensure that the input voltage does not exceed this rating to prevent damage to the device.
  • To protect the SISS66DN-T1-GE3 from ESD, it's recommended to follow standard ESD handling procedures, such as using an ESD wrist strap, ESD mat, and ESD-safe packaging materials. Additionally, ensure that the device is handled and stored in a controlled environment with minimal humidity and temperature fluctuations.

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