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SiSS98DN-T1-GE3 - Vishay

Description: MOSFET 200V Vds 20V Vgs PowerPAK 1212-8S

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PCB Footprints
SiSS98DN-T1-GE3 - Vishay PCB footprint - Other - Other - PowerPAK® 1212-8 S
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3D Models
SiSS98DN-T1-GE3 - Vishay  - 3D model - Other - PowerPAK® 1212-8 S
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SiSS98DN-T1-GE3 Details

  • Manufacturer Part Number:

    SISS98DN-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    29 Weeks

  • Date Of Intro:

    2016-07-19

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5.97

  • Avalanche Energy Rating (Eas):

    5 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    200 V

  • Drain Current-Max (ID):

    14.1 A

  • Drain-source On Resistance-Max:

    0.11 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    7 pF

  • JESD-30 Code:

    S-PDSO-N5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    57 W

  • Pulsed Drain Current-Max (IDM):

    30 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    60 ns

  • Turn-on Time-Max (ton):

    54 ns

SiSS98DN-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SISS98DN-T1-GE3 is a pad size of 1.3 mm x 0.8 mm with a 0.5 mm spacing between pads. It's essential to follow the recommended footprint to ensure proper thermal performance and to prevent thermal runaway.
  • To ensure reliability in high-temperature applications, it's crucial to follow the recommended derating curves for the SISS98DN-T1-GE3. Additionally, ensure proper thermal management, such as using a heat sink or thermal interface material, and avoid exceeding the maximum junction temperature (Tj) of 150°C.
  • The maximum allowed voltage for the SISS98DN-T1-GE3 is 100 V. Exceeding this voltage may result in permanent damage to the device. It's essential to ensure that the voltage rating is not exceeded in the application.
  • To prevent damage during storage and shipping, it's recommended to store the SISS98DN-T1-GE3 in its original packaging or an equivalent ESD-protective package. Avoid exposing the device to moisture, extreme temperatures, or physical stress.
  • The typical lead time for the SISS98DN-T1-GE3 may vary depending on the region, distributor, and quantity. However, the standard lead time is usually around 8-12 weeks. It's recommended to check with authorized distributors or Vishay Intertechnologies for the most up-to-date lead time information.

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SiSS98DN-T1-GE3 Overview

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